2SK1342-E Tech Spezifikatioune
Renesas Electronics America Inc - 2SK1342-E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - 2SK1342-E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-3P | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V | |
| Power Dissipation (Max) | 100W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 900 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Ta) | |
| Basis Produktnummer | 2SK1342 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc 2SK1342-E.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | 2SK1342-E | 2SK1339-E | 2SK1363 | 2SK1365 |
| Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora |
| Vgs (th) (Max) @ Id | - | - | - | - |
| Basis Produktnummer | 2SK1342 | 2SK1339 | - | - |
| Power Dissipation (Max) | 100W (Tc) | 80W (Tc) | - | - |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V | 7Ohm @ 1.5A, 10V | - | - |
| Supplier Device Package | TO-3P | TO-3P | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Ta) | 3A (Ta) | - | - |
| Serie | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | - |
| Mounting Type | Through Hole | Through Hole | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V | 425 pF @ 10 V | - | - |
| Entworf fir Source Voltage (Vdss) | 900 V | 900 V | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Package protegéieren | Tube | Tube | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | - |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | - | - |
| Vgs (Max) | ±30V | ±30V | - | - |
Eroflueden 2SK1342-E PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir 2SK1342-E - Renesas Electronics America Inc.
2SK1363TAEC Product (Toshiba Electronic Devices and Stora2SK1365TAEC Product (Toshiba Electronic Devices and Stora
2SK13422SK1368SAK2SK1357/K1357TAEC Product (Toshiba Electronic Devices and Stora
2SK1340-EONsemi2SK1339HITACHI2SK1340HITACHI
2SK1338-ERenesas Electronics Corporation2SK1340 MOSRenesas Electronics Corporation2SK1357TAEC Product (Toshiba Electronic Devices and Stora2SK1359TAEC Product (Toshiba Electronic Devices and Stora2SK1358TAEC Product (Toshiba Electronic Devices and Stora2SK1341Renesas Electronics Corporation2SK1341-EQRenesas Electronics Corporation2SK1350TAEC Product (Toshiba Electronic Devices and Stora2SK1349TAEC Product (Toshiba Electronic Devices and Stora2SK1339-ERenesas Electronics America IncMOSFET N-CH 900V 3A TO3P| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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