1N4007G-T Tech Spezifikatioune
Rectron USA - 1N4007G-T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rectron USA - 1N4007G-T
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Rectron USA | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-41 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AL, DO-41, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 200 nA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rectron USA 1N4007G-T.
| Produktiounsattriff | |
 |
 |
 |
|---|---|---|---|---|
| Part Number | 1N4007G-T | 1N4007GP-E3/73 | 1N4007GP-TP | 1N4007G |
| Hiersteller | Rectron USA | Vishay General Semiconductor - Diodes Division | Micro Commercial Co | onsemi |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Bulk |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | 1.1 V @ 1 A | 1.1 V @ 1 A | 1.1 V @ 1 A |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 1000 V | 1000 V | 1000 V |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | SUPERECTIFIER® | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 150°C | -65°C ~ 175°C |
| Supplier Device Package | DO-41 | DO-204AL (DO-41) | DO-41 | Axial |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | 8pF @ 4V, 1MHz | 15pF @ 4V, 1MHz | - |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Aktuell - Reverse Leakage @ Vr | 200 nA @ 1000 V | 5 µA @ 1000 V | 5 µA @ 1000 V | 10 µA @ 1000 V |
Eroflueden 1N4007G-T PDF DataDhusts an Rectron USA Dokumentatioun fir 1N4007G-T - Rectron USA.
1N4007GP-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO204AL1N4007G-K R0GTAIWAN SEMI1N4007GP-TPMicro Commercial CoDIODE GEN PURP 1KV 1A DO411N4007GonsemiDIODE GEN PURP 1KV 1A AXIAL
1N4007G-TDiodes IncorporatedDIODE GEN PURP 1KV 1A DO41
1N4007GPTRElectro-Films (EFI) / Vishay1N4007E-E3Electro-Films (EFI) / Vishay1N4007GYangjie TechnologyDO-41 1000V 1.0A Diodes Rectif1N4007GP-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO204AL1N4007GA-01Diodes Incorporated1N4007GPE-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO204AL1N4007GPonsemiDIODE GEN PURP 1KV 1A DO411N4007GTaiwan Semiconductor CorporationDIODE GEN PURP 1KV 1A DO204AL1N4007GSMC Diode SolutionsDIODE GEN PURP 1KV 1A DO411N4007FSHIKUES1N4007F M7SHIKUES1N4007FLTRSMCSEMI1N4007GPDiotec SemiconductorDIODE STD DO-41 1000V 1A| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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