RFD16N03LSM Tech Spezifikatioune
Harris Corporation - RFD16N03LSM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - RFD16N03LSM
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252-3 (DPAK) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | - | |
| Mounting Type | Surface Mount | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | - | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation RFD16N03LSM.
| Produktiounsattriff | |
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|
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|---|---|---|---|---|
| Part Number | RFD16N03LSM | RFD16N03LSM9A | RFD16N05L | RFD16N05 |
| Hiersteller | Harris Corporation | Harris Corporation | Harris Corporation | Harris Corporation |
| Power Dissipation (Max) | - | - | 60W (Tc) | 72W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A | - | 16A (Tc) | 16A (Tc) |
| Supplier Device Package | TO-252-3 (DPAK) | - | TO-251AA | I-PAK |
| Fuert Volt (Max Rds On, Min Rds On) | - | - | 4V, 5V | 10V |
| Mounting Type | Surface Mount | - | Through Hole | Through Hole |
| Operatioun Temperatur | - | - | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 30 V | - | 50 V | 50 V |
| FET Typ | N-Channel | - | N-Channel | N-Channel |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
| Rds On (Max) @ Id, Vgs | - | - | 47mOhm @ 16A, 5V | 47mOhm @ 16A, 10V |
| Package protegéieren | Bulk | Bulk | Bulk | Tube |
| Vgs (Max) | - | - | ±10V | ±20V |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | - | - | 2V @ 250mA | 4V @ 250µA |
| FET Feature | - | - | - | - |
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RFD16N03LCypress Semiconductor (Infineon Technologies)RFD16N05Harris CorporationMOSFET N-CH 50V 16A IPAKRFD16N02LSMFairchild (onsemi)RFD15P06SMHarris CorporationP-CHANNEL POWER MOSFETRFD15P06
RFD16N05onsemiMOSFET N-CH 50V 16A I-PAKRFD16N05LSMHarris CorporationN-CHANNEL POWER MOSFETRFD16N05Fairchild SemiconductorN-CHANNEL POWER MOSFETRFD16N05L MOSFairchild (onsemi)RFD15P05SM9A MOSHARRIS| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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