QH05TZ600 Tech Spezifikatioune
Power Integrations - QH05TZ600 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Power Integrations - QH05TZ600
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Power Integrations | |
| Voltage - Viru (Vf) (Max) @ Wann | 3.1 V @ 5 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220AC | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Qspeed™ | |
| Reverse Recovery Time (trr) | 10 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | 150°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 250 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 5A | |
| Capacitance @ Vr, F. | 17pF @ 10V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Power Integrations QH05TZ600.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | QH05TZ600 | QH03BZ600 | 16FR20 | VS-25F100 |
| Hiersteller | Power Integrations | Power Integrations | Solid State Inc. | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 200 V | 1000 V |
| Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Bulk |
| Supplier Device Package | TO-220AC | TO-263AB | DO-4 | DO-203AA (DO-4) |
| Reverse Recovery Time (trr) | 10 ns | 9.8 ns | - | - |
| Aktuell - Reverse Leakage @ Vr | 250 µA @ 600 V | 250 µA @ 600 V | 10 µA @ 200 V | 12 mA @ 1000 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 5A | 3A | 16A | 25A |
| Operatiounstemperatur - Junction | 150°C (Max) | 150°C (Max) | -65°C ~ 150°C | -65°C ~ 175°C |
| Mounting Type | Through Hole | Surface Mount | Stud Mount | Chassis, Stud Mount |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | Qspeed™ | Qspeed™ | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 3.1 V @ 5 A | 3 V @ 3 A | 1.2 V @ 16 A | 1.3 V @ 78 A |
| Capacitance @ Vr, F. | 17pF @ 10V, 1MHz | 11pF @ 10V, 1MHz | - | - |
| Package / Case | TO-220-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
Eroflueden QH05TZ600 PDF DataDhusts an Power Integrations Dokumentatioun fir QH05TZ600 - Power Integrations.
QH03BZ600Power IntegrationsDIODE GEN PURP 600V 3A TO263AB16FR20Solid State Inc.DIODE GEN PURP 200V 16A DO4VS-25F100Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 25A DO203AA
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QH08TZ600Power IntegrationsDIODE GEN PURP 600V 8A TO220AC
B140B-13-FDiodes IncorporatedDIODE SCHOTTKY 40V 1A SMB
MBRB1645T4GonsemiDIODE SCHOTTKY 45V 16A D2PAK
QH0P ESIntelQH05BZ600Power IntegrationsDIODE GEN PURP 600V 5A TO263AB
STPS2150STMicroelectronicsDIODE SCHOTTKY 150V 2A DO15QH08BZ600Power IntegrationsDIODE GEN PURP 600V 8A TO263AB
BYS459B-1500SE3/45Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1.5KV 10A TO263AB
SB240S-E3/73Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 40V 2A DO204AL
R3740Microchip TechnologyDIODE GEN PURP 400V 85A DO51N4004Micro Commercial CoDIODE GEN PURP 400V 1A DO41QH03TZ600Power IntegrationsDIODE GEN PURP 600V 3A TO220AC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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