IGD616NT1 Tech Spezifikatioune
Power Integrations - IGD616NT1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Power Integrations - IGD616NT1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Power Integrations | |
| Voltage - Supply | 14V ~ 16V | |
| Supplier Device Package | Module | |
| Serie | SCALE™-1 | |
| Rise / Fall Zäit (Typ) | 100ns, 80ns | |
| Package / Case | 36-DIP Module, 24 Leads | |
| Package protegéieren | Tray | |
| Operatioun Temperatur | -40°C ~ 85°C (TA) | |
| Zuel vun Drivers | 1 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Through Hole | |
| Logik Voltage - VIL, VIH | - | |
| Input Type | Non-Inverting | |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET | |
| Gelaacht Konfiguratioun | High-Side or Low-Side | |
| Aktuell - Peak Output (Source, Sink) | - | |
| Kanalstyp | Single | |
| Basis Produktnummer | IGD616 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Power Integrations IGD616NT1.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | IGD616NT1 | IGD515EI-34 | IGD616 | IGD515EI |
| Hiersteller | Power Integrations | Power Integrations | Power Integrations | Power Integrations |
| Basis Produktnummer | IGD616 | IGD515 | IGD616 | IGD515 |
| Operatioun Temperatur | -40°C ~ 85°C (TA) | -40°C ~ 85°C | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Input Type | Non-Inverting | - | - | - |
| Gelaacht Konfiguratioun | High-Side or Low-Side | High-Side or Low-Side | High-Side or Low-Side | High-Side or Low-Side |
| Package / Case | 36-DIP Module, 24 Leads | 36-DIP Module, 24 Leads | 36-DIP Module, 24 Leads | Module |
| Voltage - Supply | 14V ~ 16V | 12V ~ 16V | 14V ~ 16V | 12V ~ 16V |
| Logik Voltage - VIL, VIH | - | 0.9V, 3.8V | 0.9V, 3.8V | 0.9V, 3.8V |
| Package protegéieren | Tray | Tray | Box | Bulk |
| Supplier Device Package | Module | Module | Module | Module |
| Zuel vun Drivers | 1 | 1 | 1 | 1 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Rise / Fall Zäit (Typ) | 100ns, 80ns | 40ns, 40ns | 100ns, 80ns | 40ns, 40ns |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET | IGBT, N-Channel, P-Channel MOSFET | IGBT, N-Channel, P-Channel MOSFET | IGBT, N-Channel, P-Channel MOSFET |
| Serie | SCALE™-1 | SCALE™-1 | SCALE™-1 | SCALE™-1 |
| Aktuell - Peak Output (Source, Sink) | - | 15A, 15A | 16A, 16A | 15A, 15A |
| Kanalstyp | Single | Single | Single | Single |
Eroflueden IGD616NT1 PDF DataDhusts an Power Integrations Dokumentatioun fir IGD616NT1 - Power Integrations.
IGD1101BIKIGD515EI-34Power IntegrationsIC GATE DRVR HI/LOW SIDE MODULEIGD616Power IntegrationsIC GATE DRVR HI/LOW SIDE MODULEIGDD6-1-326-D1616-E1N6-DL-FASEMIKRONIGBT ModuleIGD616N(I)T1CONCEPTIGBT ModuleIGDD6-1-426-D1616-E1N6-DL-FASEMIKRONIGBT ModuleIGDD6-2-326-D3816-E1F12-BL-FASEMIKRONIGBT ModuleIGD515EIPower IntegrationsIC GATE DRVR HI/LOW SIDE MODULEIGD515EI-17CONCEPTIGBT Module
IGD06N60T G06T60Cypress Semiconductor (Infineon Technologies)IGDD6-2-326-D1616-E1F12-DH-FASEMIKRONIGBT ModuleIGD06T60Cypress Semiconductor (Infineon Technologies)IGD615AICONCEPTIGBT ModuleIGDD6-2-426-D3816-E1F12-BL-FASEMIKRONIGBT ModuleIGD1102IKIGD616IT1Power IntegrationsPOWER MODULE GATE DRVRIGDD6-2-426-D1616-E1F12-DH-FASEMIKRONIGBT ModuleIGD515EI-04CONCEPTIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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