2SD316EI-12 Tech Spezifikatioune
Power Integrations - 2SD316EI-12 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Power Integrations - 2SD316EI-12
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Power Integrations | |
| Voltage - Supply | 15V | |
| Supplier Device Package | Module | |
| Serie | SCALE™-1 | |
| Rise / Fall Zäit (Typ) | - | |
| Package / Case | Module | |
| Package protegéieren | Tray | |
| Operatioun Temperatur | -40°C ~ 85°C (TA) | |
| Zuel vun Drivers | 2 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Chassis Mount | |
| Logik Voltage - VIL, VIH | - | |
| Input Type | - | |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET | |
| Gelaacht Konfiguratioun | Half-Bridge | |
| Aktuell - Peak Output (Source, Sink) | 18A, 18A | |
| Kanalstyp | - | |
| Basis Produktnummer | 2SD316 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Power Integrations 2SD316EI-12.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 2SD316EI-12 | 2SD316EI-17 | 2SD315AI | 2SD315AI-33 |
| Hiersteller | Power Integrations | Power Integrations | Power Integrations | Power Integrations |
| Serie | SCALE™-1 | SCALE™-1 | SCALE™-1 | SCALE™-1 |
| Logik Voltage - VIL, VIH | - | - | - | - |
| Mounting Type | Chassis Mount | Chassis Mount | Through Hole | Through Hole |
| Operatioun Temperatur | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 85°C | -40°C ~ 85°C (TA) |
| Package protegéieren | Tray | Tray | Tray | Bulk |
| Zuel vun Drivers | 2 | 2 | 2 | 2 |
| Gelaacht Konfiguratioun | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Aktuell - Peak Output (Source, Sink) | 18A, 18A | 18A, 18A | 18A, 18A | 18A, 18A |
| Kanalstyp | - | - | - | - |
| Rise / Fall Zäit (Typ) | - | - | 160ns, 130ns | - |
| Basis Produktnummer | 2SD316 | 2SD316 | 2SD315 | 2SD315 |
| Voltage - Supply | 15V | 15V | - | 15V |
| Input Type | - | - | - | - |
| Package / Case | Module | Module | 44-DIP Module, 42 Leads | Module |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET | IGBT, N-Channel, P-Channel MOSFET | IGBT, N-Channel, P-Channel MOSFET | IGBT, N-Channel, P-Channel MOSFET |
| Supplier Device Package | Module | Module | Module | Module |
Eroflueden 2SD316EI-12 PDF DataDhusts an Power Integrations Dokumentatioun fir 2SD316EI-12 - Power Integrations.
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2SD317Panasonic2SD315AI-33Power IntegrationsIC GATE DRVR HALF-BRIDGE MODULE
2SD3402 D3402TAEC Product (Toshiba Electronic Devices and Stora
2SD317AFairchild (onsemi)2SD315AI-25Power IntegrationsIC GATE DRVR HALF-BRIDGE MODULE
2SD315AI ULPower IntegrationsIC GATE DRVR HALF-BRIDGE MODULE2SD315A1-17CONCEPTIGBT Module2SD338TAEC Product (Toshiba Electronic Devices and Stora2SD315AIC ULPower IntegrationsGATE DRIVER CORE, SCALE-1, 1700V
2SD316EI_ManualCypress Semiconductor (Infineon Technologies)IGBT Module
2SD330EAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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