PJS6413_S1_00001 Tech Spezifikatioune
Panjit International Inc. - PJS6413_S1_00001 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Panjit International Inc. - PJS6413_S1_00001
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | PANJIT | |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-6 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 4.4A, 4.5V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | SOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 522 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Ta) | |
| Basis Produktnummer | PJS6413 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Panjit International Inc. PJS6413_S1_00001.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PJS6413_S1_00001 | PJS6403_S1_00001 | PJSD03LCFN2_R1_00001 | PJSD03LCFN2 R1 |
| Hiersteller | Panjit International Inc. | Panjit International Inc. | PANJIT | PANJIT |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | 7.8 nC @ 4.5 V | - | - |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | - | - |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 4.4A, 4.5V | 32mOhm @ 4A, 10V | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Ta) | 6.4A (Ta) | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| FET Typ | P-Channel | P-Channel | - | - |
| Vgs (Max) | ±12V | ±20V | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | - | - |
| Serie | - | - | - | - |
| Vgs (th) (Max) @ Id | 1.2V @ 250µA | 2.5V @ 250µA | - | - |
| Package / Case | SOT-23-6 | SOT-23-6 | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 522 pF @ 10 V | 870 pF @ 15 V | - | - |
| Basis Produktnummer | PJS6413 | PJS6403 | - | - |
| Supplier Device Package | SOT-23-6 | SOT-23-6 | - | - |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | - | - |
Eroflueden PJS6413_S1_00001 PDF DataDhusts an Panjit International Inc. Dokumentatioun fir PJS6413_S1_00001 - Panjit International Inc..
PJSD03LCFN2_R1_00001PANJITPJSD03LCFN2 R1PANJITPJSD03LCFN2PANJITPJS6404PANJITPJS6405PANJITPJS6403_S1_00001Panjit International Inc.30V P-CHANNEL ENHANCEMENT MODE MPJSD03LCTMPANJITPJS6415A_S1_00001PANJITPJSD03LCTSPANJITPJS008-2003-0Yamaichi ElectronicsPJS6403PANJITPJSD03PANJITPJSD03CWTINYSEMIPJS6401PANJITPJSD012TMPANJITPJS6600_S1_00001Panjit International Inc.30V COMPLEMENTARY ENHANCEMENT MOPJSD03TMPANJITPJS6407PANJIT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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