ES1D_R1_00001 Tech Spezifikatioune
Panjit International Inc. - ES1D_R1_00001 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Panjit International Inc. - ES1D_R1_00001
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | PANJIT | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | SMA (DO-214AC) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AC, SMA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 7pF @ 4V, 1MHz | |
| Basis Produktnummer | ES1D |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Panjit International Inc. ES1D_R1_00001.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | ES1D_R1_00001 | ES1DL RVG | ES1DHE3_A/I | ES1DHE3_A/H |
| Hiersteller | Panjit International Inc. | TSC (Taiwan Semiconductor) | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | 950mV @ 1A | 920 mV @ 1 A | 920 mV @ 1 A |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200V | 200 V | 200 V |
| Technologie | Standard | - | Standard | Standard |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Package / Case | DO-214AC, SMA | DO-219AB | DO-214AC, SMA | DO-214AC, SMA |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 200 V | 5µA @ 200V | 5 µA @ 200 V | 5 µA @ 200 V |
| Serie | - | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Capacitance @ Vr, F. | 7pF @ 4V, 1MHz | 10pF @ 4V, 1MHz | 10pF @ 4V, 1MHz | 10pF @ 4V, 1MHz |
| Package protegéieren | Tape & Reel (TR) | - | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | SMA (DO-214AC) | Sub SMA | DO-214AC (SMA) | DO-214AC (SMA) |
| Basis Produktnummer | ES1D | - | ES1 | ES1 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery = 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns | 35ns | 25 ns | 25 ns |
Eroflueden ES1D_R1_00001 PDF DataDhusts an Panjit International Inc. Dokumentatioun fir ES1D_R1_00001 - Panjit International Inc..
ES1DL RVGTSC (Taiwan Semiconductor)DIODE GEN PURP 200V 1A SUB SMA
ES1G R3Taiwan Semiconductor
ES1F_NLFairchild (onsemi)ES1FL R3Taiwan Semiconductor
ES1E-E3/61TVISHAY MAS
ES1DVRFreescale / NXP SemiconductorsES1DHE3_A/IVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO214ACES1D_NLFairchild (onsemi)ES1G 2K/RES1DWG_R2_00001PANJITES1DHE3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO214ACES1DHE3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO214ACES1DHE3/5ATVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO214ACES1G T/RPANJIT
ES1D_HFLITEONES1D_R1_00101-PECPANJITES1E T/RPANJITES1G SMAKYH| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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