FK3306010L Tech Spezifikatioune
Nuvoton Technology Corporation - FK3306010L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nuvoton Technology Corporation - FK3306010L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Nuvoton Technology Corporation | |
Vgs (th) (Max) @ Id | 1.5V @ 1µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SSSMini3-F2-B | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V | |
Power Dissipation (Max) | 100mW (Ta) | |
Package / Case | SOT-723 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 12 pF @ 3 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100mA (Ta) | |
Basis Produktnummer | FK3306010 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nuvoton Technology Corporation FK3306010L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FK3306010L | SQ2318BES-T1_GE3 | IRLR8503 | FK3306010L |
Hiersteller | Nuvoton Technology Corporation | Vishay Siliconix | Infineon Technologies | Panasonic Electronic Components |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4V | 4.5V, 10V | 4.5V, 10V | 2.5V, 4V |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 12 pF @ 3 V | 500 pF @ 25 V | 1650 pF @ 25 V | 12 pF @ 3 V |
Serie | - | Automotive, AEC-Q101, TrenchFET® | HEXFET® | - |
Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 30 V | 60 V |
Package / Case | SOT-723 | TO-236-3, SC-59, SOT-23-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT-723 |
Operatioun Temperatur | 150°C | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 1.5V @ 1µA | 2.5V @ 250µA | 3V @ 250µA | 1.5V @ 1µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 100mW (Ta) | 3W (Tc) | 62W (Tc) | 100mW (Ta) |
Supplier Device Package | SSSMini3-F2-B | SOT-23-3 (TO-236) | D-Pak | SSSMini3-F2-B |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100mA (Ta) | 8A (Tc) | 44A (Tc) | 100mA (Ta) |
Basis Produktnummer | FK3306010 | SQ2318 | - | - |
Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V | 26.3mOhm @ 4A, 10V | 16mOhm @ 15A, 10V | 12Ohm @ 10mA, 4V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Vgs (Max) | ±12V | ±20V | ±20V | ±12V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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