PSMN2R0-60PS,127 Tech Spezifikatioune
Nexperia USA Inc. - PSMN2R0-60PS,127 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PSMN2R0-60PS,127
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V | |
| Power Dissipation (Max) | 338W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 9997 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
| Basis Produktnummer | PSMN2R0 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PSMN2R0-60PS,127.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PSMN2R0-60PS,127 | PSMN2R2-30YLC,115 | PSMN2R0-60PSRQ | PSMN2R0-60PS,127 |
| Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | NXP Semiconductors |
| Package / Case | TO-220-3 | SC-100, SOT-669 | TO-220-3 | TO-220-3 |
| Basis Produktnummer | PSMN2R0 | PSMN2R2 | PSMN2R0 | PSMN2R0 |
| Package protegéieren | Tube | Tape & Reel (TR) | Tube | Bulk |
| Supplier Device Package | TO-220AB | LFPAK56, Power-SO8 | TO-220AB | TO-220AB |
| Input Capacitance (Ciss) (Max) @ Vds | 9997 pF @ 30 V | 3310 pF @ 15 V | 13500 pF @ 30 V | 9997 pF @ 30 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 4V @ 1mA | 1.95V @ 1mA | 4V @ 1mA | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V | 2.15mOhm @ 25A, 10V | 2.2mOhm @ 25A, 10V | 2.2mOhm @ 25A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 60 V | 60 V |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V | 55 nC @ 10 V | 192 nC @ 10 V | 137 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 100A (Tc) | 120A (Tc) | 120A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 338W (Tc) | 141W (Tc) | 338W (Tc) | 338W (Tc) |
| FET Feature | - | - | - | - |
Eroflueden PSMN2R0-60PS,127 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PSMN2R0-60PS,127 - Nexperia USA Inc..
PSMN2R1-40PLFreescale / NXP SemiconductorsPSMN2R2-30YLC,115Nexperia USA Inc.MOSFET N-CH 30V 100A LFPAK56PSMN2R0-30YLEFreescale / NXP SemiconductorsPSMN2R0-60PSRNexperiaPSMN2R0-60Freescale / NXP SemiconductorsPSMN2R0-55YLHXNexperiaPSMN2R0-30YLDNexperiaPSMN2R2-30YLC.115Freescale / NXP SemiconductorsPSMN2R2-25YLCFreescale / NXP SemiconductorsPSMN2R0-60PS+127Freescale / NXP SemiconductorsPSMN2R0-60PSRQNexperia USA Inc.MOSFET N-CH 60V 120A TO220ABPSMN2R0-30YLFreescale / NXP SemiconductorsPSMN2R0-30YL115Nexperia
PSMN2R0-60PSLUMILEDSPSMN2R2-30YLCFreescale / NXP SemiconductorsPSMN2R0-60PS127Freescale / NXP SemiconductorsPSMN2R0-60PS,127NXP SemiconductorsNEXPERIA PSMN2R0-60PS - 120A, 60PSMN2R0-30YLDXNXP Semiconductors| Allgemeng Länner Login logistesch Zäit Referenz | ||
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| DHL & FEDEX Sendung Käschten Referenz | |
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| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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