PSMN1R0-25YLDX Tech Spezifikatioune
Nexperia USA Inc. - PSMN1R0-25YLDX technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PSMN1R0-25YLDX
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Nexperia | |
Vgs (th) (Max) @ Id | 2.2V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK56, Power-SO8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 0.89mOhm @ 25A, 10V | |
Power Dissipation (Max) | 160W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 5308 pF @ 12 V | |
Gate Charge (Qg) (Max) @ Vgs | 71.8 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | Schottky Diode (Body) | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
Basis Produktnummer | PSMN1R0 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PSMN1R0-25YLDX.
Produktiounsattriff | ||||
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Part Number | PSMN1R0-25YLDX | PSMN1R0-30YLC,115 | PSMN1R0-40SSHJ | PSMN1R0-30YLDX |
Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
Vgs (th) (Max) @ Id | 2.2V @ 1mA | 1.95V @ 1mA | 3.6V @ 1mA | 2.2V @ 2mA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 100A (Tc) | 325A (Ta) | 100A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 71.8 nC @ 10 V | 103.5 nC @ 10 V | 137 nC @ 10 V | 121.35 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 5308 pF @ 12 V | 6645 pF @ 15 V | 10322 pF @ 25 V | 8598 pF @ 15 V |
Power Dissipation (Max) | 160W (Tc) | 272W (Tc) | 375W (Ta) | 238W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
FET Feature | Schottky Diode (Body) | - | Schottky Diode (Body) | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Supplier Device Package | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | LFPAK88 (SOT1235) | LFPAK56, Power-SO8 |
Serie | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 25 V | 30 V | 40 V | 30 V |
Basis Produktnummer | PSMN1R0 | PSMN1R0 | PSMN1R0 | PSMN1R0 |
Rds On (Max) @ Id, Vgs | 0.89mOhm @ 25A, 10V | 1.15mOhm @ 25A, 10V | 1mOhm @ 25A, 10V | 1.02mOhm @ 25A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | SOT-1235 | SC-100, SOT-669 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden PSMN1R0-25YLDX PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PSMN1R0-25YLDX - Nexperia USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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