PMPB85ENEAX Tech Spezifikatioune
Nexperia USA Inc. - PMPB85ENEAX technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PMPB85ENEAX
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 2.7V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DFN2020MD-6 | |
| Serie | Automotive, AEC-Q100 | |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3A, 10V | |
| Power Dissipation (Max) | 1.6W (Ta), 15.6W (Tc) | |
| Package / Case | 6-UDFN Exposed Pad | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | |
| Basis Produktnummer | PMPB85 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PMPB85ENEAX.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PMPB85ENEAX | PMPB48EPAX | PMPB29XPEAX | PMPB40SNA115 |
| Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. |
| Serie | Automotive, AEC-Q100 | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q101, TrenchMOS™ | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 1.8V, 4.5V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | DFN2020MD-6 | DFN2020MD-6 | DFN2020MD-6 | DFN2020MD-6 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 2.7V @ 250µA | 2.5V @ 250µA | 1V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V | 26 nC @ 10 V | 45 nC @ 4.5 V | 24 nC @ 10 V |
| Basis Produktnummer | PMPB85 | PMPB48 | PMPB29 | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 30 V | 860 pF @ 15 V | 2970 pF @ 10 V | 612 pF @ 30 V |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 20 V | 60 V |
| Package / Case | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad | 6-UDFN Exposed Pad |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3A, 10V | 50mOhm @ 4.7A, 10V | 32.5mOhm @ 5A, 4.5V | 43mOhm @ 4.8A, 10V |
| Vgs (Max) | ±20V | ±20V | ±12V | ±20V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | 4.7A (Ta) | 5A (Ta) | 12.9A (Tc) |
| Power Dissipation (Max) | 1.6W (Ta), 15.6W (Tc) | 1.7W (Ta), 12.5W (Tc) | 1.7W (Ta), 12.5W (Tc) | 1.7W (Ta), 12.5W (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Eroflueden PMPB85ENEAX PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PMPB85ENEAX - Nexperia USA Inc..
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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