PMK50XP,518 Tech Spezifikatioune
Nexperia USA Inc. - PMK50XP,518 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PMK50XP,518
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 950mV @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | TrenchMOS™ | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.8A, 4.5V | |
| Power Dissipation (Max) | 5W (Tc) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.9A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PMK50XP,518.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | PMK50XP,518 | STP10NK80Z | PMK50XP,518 | HUF75623P3 |
| Hiersteller | Nexperia USA Inc. | STMicroelectronics | NXP Semiconductors | onsemi |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Supplier Device Package | 8-SO | TO-220 | 8-SO | TO-220-3 |
| Entworf fir Source Voltage (Vdss) | 20 V | 800 V | 20 V | 100 V |
| Vgs (Max) | ±12V | ±30V | ±12V | ±20V |
| Vgs (th) (Max) @ Id | 950mV @ 250µA | 4.5V @ 100µA | 950mV @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 5W (Tc) | 190W (Tc) | 5W (Tc) | 85W (Tc) |
| Serie | TrenchMOS™ | SuperMESH™ | TrenchMOS™ | UltraFET™ |
| Package protegéieren | Tape & Reel (TR) | Tube | Bulk | Tube |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 10V | 4.5V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.8A, 4.5V | 900mOhm @ 4.5A, 10V | 50mOhm @ 2.8A, 4.5V | 64mOhm @ 22A, 10V |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.9A (Tc) | 9A (Tc) | 7.9A (Tc) | 22A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | 72 nC @ 10 V | 10 nC @ 4.5 V | 52 nC @ 20 V |
| FET Typ | P-Channel | N-Channel | P-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V | 2180 pF @ 25 V | 1020 pF @ 20 V | 790 pF @ 25 V |
Eroflueden PMK50XP,518 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PMK50XP,518 - Nexperia USA Inc..
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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