PMF370XN,115 Tech Spezifikatioune
Nexperia USA Inc. - PMF370XN,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PMF370XN,115
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Nexperia | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-323 | |
Serie | TrenchMOS™ | |
Rds On (Max) @ Id, Vgs | 440mOhm @ 200mA, 4.5V | |
Power Dissipation (Max) | 560mW (Tc) | |
Package / Case | SC-70, SOT-323 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 37 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 0.65 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 870mA (Tc) | |
Basis Produktnummer | PMF370 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PMF370XN,115.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | PMF370XN,115 | PMF280UN,115 | PMF290XN,115 | PMF400UN,115 |
Hiersteller | Nexperia USA Inc. | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. |
Supplier Device Package | SOT-323 | SC-70 | SC-70 | SC-70 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 870mA (Tc) | 1.02A (Tc) | 1A (Tc) | 830mA (Ta) |
Serie | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±12V | ±8V | ±12V | ±8V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 0.65 nC @ 4.5 V | 0.89 nC @ 4.5 V | 0.72 nC @ 4.5 V | 0.89 nC @ 4.5 V |
Basis Produktnummer | PMF370 | PMF28 | PMF29 | PMF40 |
Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 |
Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 20 V | 30 V |
Power Dissipation (Max) | 560mW (Tc) | 560mW (Tc) | 560mW (Tc) | 560mW (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 37 pF @ 25 V | 45 pF @ 20 V | 34 pF @ 20 V | 43 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 1.8V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 440mOhm @ 200mA, 4.5V | 340mOhm @ 200mA, 4.5V | 350mOhm @ 200mA, 4.5V | 480mOhm @ 200mA, 4.5V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1V @ 250µA | 1.5V @ 250µA | 1V @ 250µA |
Eroflueden PMF370XN,115 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PMF370XN,115 - Nexperia USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.