PHK31NQ03LT,518 Tech Spezifikatioune
Nexperia USA Inc. - PHK31NQ03LT,518 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PHK31NQ03LT,518
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 2.15V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | TrenchMOS™ | |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 25A, 10V | |
| Power Dissipation (Max) | 6.9W (Tc) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4235 pF @ 12 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30.4A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PHK31NQ03LT,518.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PHK31NQ03LT,518 | PHK18NQ03LT,518 | PHK31NQ03LT,518 | PHKD13N03LY |
| Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. | Freescale / NXP Semiconductors |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 6.9W (Tc) | 6.25W (Tc) | - | - |
| Vgs (th) (Max) @ Id | 2.15V @ 1mA | 2.15V @ 1mA | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4235 pF @ 12 V | 1380 pF @ 12 V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V | 10.6 nC @ 4.5 V | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30.4A (Tc) | 20.3A (Tc) | - | - |
| Supplier Device Package | 8-SO | 8-SO | - | - |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 25A, 10V | 8.9mOhm @ 25A, 10V | - | - |
| Serie | TrenchMOS™ | TrenchMOS™ | * | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - | - |
Eroflueden PHK31NQ03LT,518 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PHK31NQ03LT,518 - Nexperia USA Inc..
PHK31NQ03LT,518NXP USA Inc.MOSFET N-CH 30V 30.4A 8-SOICPHKD13N03LYFreescale / NXP Semiconductors
PHK28NQ03LTLUMILEDSPHK4NQ20TFreescale / NXP SemiconductorsPHK5NQ15T+518Freescale / NXP SemiconductorsPHK5NQ15TFreescale / NXP SemiconductorsPHK13N03LT+518Freescale / NXP SemiconductorsPHK31NQ03LTNexperia USA Inc.POWER FIELD-EFFECT TRANSISTOR, 3PHK18NQ03LT,518Nexperia USA Inc.MOSFET N-CH 30V 20.3A 8SOPHK28NQ03LT+518Freescale / NXP SemiconductorsPHK4NQ10TFreescale / NXP SemiconductorsPHK24NQ04LTVBSEMIPHK18NQ03LT.518Freescale / NXP SemiconductorsPHKD13N03LT518NexperiaPHK28N03LTLUMILEDSPHK5NQ10TLUMILEDSPHK18NQ03LTFreescale / NXP SemiconductorsPHKD13N03LTFreescale / NXP Semiconductors| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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