BUK663R7-75C,118 Tech Spezifikatioune
Nexperia USA Inc. - BUK663R7-75C,118 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - BUK663R7-75C,118
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA | |
| Vgs (Max) | ±16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | Automotive, AEC-Q101, TrenchMOS™ | |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V | |
| Power Dissipation (Max) | 306W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 15450 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 75 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. BUK663R7-75C,118.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BUK663R7-75C,118 | BUK6C3R3-75C118 | BUK663R7-75C,118 | BUK6C3R3-75C,118 |
| Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | NXP USA Inc. | NXP USA Inc. |
| Vgs (Max) | ±16V | - | ±16V | ±16V |
| Supplier Device Package | D2PAK | - | D2PAK | D2PAK-7 |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V | 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Serie | Automotive, AEC-Q101, TrenchMOS™ | * | Automotive, AEC-Q101, TrenchMOS™ | Automotive, AEC-Q101, TrenchMOS™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V | - | 234 nC @ 10 V | 253 nC @ 10 V |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V | - | 4mOhm @ 25A, 10V | 3.4mOhm @ 90A, 10V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 15450 pF @ 25 V | - | 15450 pF @ 25 V | 15800 pF @ 25 V |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 306W (Tc) | - | 306W (Tc) | 300W (Tc) |
| FET Typ | N-Channel | - | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA | - | 2.8V @ 1mA | 2.8V @ 1mA |
| Entworf fir Source Voltage (Vdss) | 75 V | - | 75 V | 75 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | - | 120A (Tc) | 181A (Tc) |
Eroflueden BUK663R7-75C,118 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir BUK663R7-75C,118 - Nexperia USA Inc..
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BUK6C3R3-75C,118Nexperia USA Inc.MOSFET N-CH 75V 181A D2PAKBUK6C2R1-55CFreescale / NXP Semiconductors| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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