BSH201,215 Tech Spezifikatioune
Nexperia USA Inc. - BSH201,215 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - BSH201,215
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Vgs (th) (Max) @ Id | 1V @ 1mA (Min) | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-236AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 160mA, 10V | |
| Power Dissipation (Max) | 417mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 48 V | |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA (Ta) | |
| Basis Produktnummer | BSH201 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. BSH201,215.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | BSH201,215 | BSH114,215 | BSH202 | BSH114215 |
| Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | Freescale / NXP Semiconductors | Nexperia |
| Power Dissipation (Max) | 417mW (Ta) | 360mW (Ta), 830mW (Tc) | - | - |
| FET Typ | P-Channel | N-Channel | - | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 100 V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 48 V | 138 pF @ 25 V | - | - |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 160mA, 10V | 500mOhm @ 500mA, 10V | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Serie | - | TrenchMOS™ | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 300mA (Ta) | 500mA (Ta) | - | - |
| Basis Produktnummer | BSH201 | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | - | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Vgs (th) (Max) @ Id | 1V @ 1mA (Min) | 4V @ 1mA | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | 4.6 nC @ 10 V | - | - |
| Supplier Device Package | TO-236AB | TO-236AB | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
Eroflueden BSH201,215 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir BSH201,215 - Nexperia USA Inc..
BSH202Freescale / NXP SemiconductorsBSH114215NexperiaBSH114Freescale / NXP SemiconductorsBSH121,115NEXPBSH204NexperiaBSH203215Nexperia USA Inc.NOW NEXPERIA SMALL SIGNAL FIELD-BSH202215Freescale / NXP SemiconductorsBSH202+215Freescale / NXP SemiconductorsBSH121+135Freescale / NXP SemiconductorsBSH203Freescale / NXP SemiconductorsBSH201NexperiaBSH121Freescale / NXP SemiconductorsBSH201215NexperiaBSH114,215NXP USA Inc.MOSFET N-CH 100V 500MA SOT23BSH114,215Nexperia USA Inc.MOSFET N-CH 100V 500MA TO236ABBSH205+215Freescale / NXP SemiconductorsBSH205SIPUSEMI
BSH112(wnm6001)LUMILEDS| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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