BAS21GWX Tech Spezifikatioune
Nexperia USA Inc. - BAS21GWX technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - BAS21GWX
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Nexperia | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | SOD-123 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Automotive, AEC-Q101 | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SOD-123 | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 150°C (Max) | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 225mA | |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz | |
| Basis Produktnummer | BAS21 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. BAS21GWX.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | BAS21GWX | BAS21HT1 | BAS21HE3-TP | BAS21E6327HTSA1 |
| Hiersteller | Nexperia USA Inc. | onsemi | Micro Commercial Co | Infineon Technologies |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 50 ns |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 200 V | 100 nA @ 200 V | 100 nA @ 200 V | 100 nA @ 200 V |
| Package / Case | SOD-123 | SC-76, SOD-323 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 250 V | 200 V | 200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | Automotive, AEC-Q101 | - | Automotive, AEC-Q101 | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 225mA | 200mA | 200mA | 250mA |
| Operatiounstemperatur - Junction | 150°C (Max) | - | -65°C ~ 150°C | 150°C (Max) |
| Supplier Device Package | SOD-123 | SOD-323 | SOT-23 | PG-SOT23 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Basis Produktnummer | BAS21 | BAS21 | BAS21 | BAS21 |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 mA | 1.25 V @ 200 mA | 1.25 V @ 200 mA | 1.25 V @ 200 mA |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz | 5pF @ 0V, 1MHz | 5pF @ 0V, 1MHz | 5pF @ 0V, 1MHz |
Eroflueden BAS21GWX PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir BAS21GWX - Nexperia USA Inc..
BAS21HT1onsemiDIODE SWITCH 200MA 250V SOD323
BAS21E6433InfineonBAS21E7874Cypress Semiconductor (Infineon Technologies)BAS21HE3-TPMicro Commercial CoDIODE GEN PURP 200V 200MA SOT23
BAS21DW5T1GonsemiDIODE ARRAY GP 250V 200MA SOT353
BAS21H+115Freescale / NXP SemiconductorsBAS21E6327HTSA1Infineon TechnologiesDIODE GEN PURP 200V 250MA SOT23BAS21HGPCHENMKOBAS21H115ReelBAS21E6327Cypress Semiconductor (Infineon Technologies)BAS21C2CYSTECH
BAS21DWA-7Diodes IncorporatedDIODE SW DL 2500V 100MA SOT353
BAS21DW-7Diodes IncorporatedDIODE ARRAY GP 200V 200MA SOT363
BAS21HMFHT116Rohm SemiconductorDIODE GEN PURP 200V 200MA SSD3
BAS21H,115Nexperia USA Inc.DIODE GP 200V 200MA SOD123FBAS21GWNexperiaBAS21H115NexperiaBAS21H/DG+115Freescale / NXP Semiconductors| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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