MJ802 Tech Spezifikatioune
NTE Electronics, Inc - MJ802 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - MJ802
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Collector Emitter Breakdown (Max) | 90 V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 750mA, 7.5A | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-204 (TO-3) | |
| Serie | - | |
| Power - Max | 200 W | |
| Package / Case | TO-204AA, TO-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bag | |
| Operatioun Temperatur | - | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 2MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 25 @ 7.5A, 2V | |
| Aktuell - Kollektorat Cutoff (Max) | - | |
| Aktuell - Sammler (Ic) (Max) | 30 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc MJ802.
| Produktiounsattriff | |
 |
 |
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|---|---|---|---|---|
| Part Number | MJ802 | MMBT4126 | FMMT413TA | ZXTN25020CFHTA |
| Hiersteller | NTE Electronics, Inc | onsemi | Diodes Incorporated | Diodes Incorporated |
| Aktuell - Kollektorat Cutoff (Max) | - | 50nA (ICBO) | 100nA (ICBO) | 50nA (ICBO) |
| Power - Max | 200 W | 350 mW | 330 mW | 1.25 W |
| Package / Case | TO-204AA, TO-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-204 (TO-3) | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Aktuell - Sammler (Ic) (Max) | 30 A | 200 mA | 100 mA | 4.5 A |
| Transistor Type | NPN | PNP | NPN - Avalanche Mode | NPN |
| Serie | - | - | - | - |
| Operatioun Temperatur | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 750mA, 7.5A | 400mV @ 5mA, 50mA | 150mV @ 1mA, 10mA | 140mV @ 450mA, 4.5A |
| Package protegéieren | Bag | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Frequenz - Iwwergang | 2MHz | 250MHz | 150MHz | 185MHz |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 25 @ 7.5A, 2V | 120 @ 2mA, 1V | 50 @ 10mA, 10V | 200 @ 10mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 90 V | 25 V | 50 V | 20 V |
Eroflueden MJ802 PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir MJ802 - NTE Electronics, Inc.
MJ8503MOTMJ8502MOTOROLAMMBT4126onsemiTRANS PNP 25V 0.2A SOT23-3FMMT413TADiodes IncorporatedTRANS NPN 50V 0.1A SOT23-3ZXTN25020CFHTADiodes IncorporatedTRANS NPN 20V 4.5A SOT23-3MJ8505SYN
ZXTN4004ZTADiodes IncorporatedTRANS NPN 150V 1A SOT89
ZTX869STZDiodes IncorporatedTRANS NPN 25V 5A E-LINE
DNLS160V-7Diodes IncorporatedTRANS NPN 60V 1A SOT563
MJ8M63TLLAPIS Technology
MMBT3906Taiwan Semiconductor CorporationSOT-23, -40V, -0.2A, PNP BIPOLAR
2N4403TAFairchild SemiconductorSMALL SIGNAL BIPOLAR TRANSISTOR,
MMST4403-7Diodes IncorporatedTRANS PNP 40V 0.6A SC70-3MJ8M63-TLGLAPIS Technology
MJ802onsemiTRANS PWR NPN 90V 30A TO3
PCP1103-TD-HonsemiTRANS PNP 30V 1.5A PCPMJ8M63-TLLAPIS Technology
MJ802STMicroelectronicsTRANS NPN 90V 30A TO3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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