2N6668 Tech Spezifikatioune
NTE Electronics, Inc - 2N6668 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - 2N6668
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A | |
| Transistor Type | PNP - Darlington | |
| Supplier Device Package | TO-220 | |
| Serie | - | |
| Power - Max | 65 W | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bag | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | - | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V | |
| Aktuell - Kollektorat Cutoff (Max) | 1mA | |
| Aktuell - Sammler (Ic) (Max) | 10 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc 2N6668.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 2N6668 | 2N6667G | 2N6678 | 2N6667 |
| Hiersteller | NTE Electronics, Inc | onsemi | Solid State Inc. | onsemi |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | 150°C (TJ) | -65°C ~ 150°C (TJ) | - | -65°C ~ 150°C (TJ) |
| Aktuell - Kollektorat Cutoff (Max) | 1mA | 1mA | - | 1mA |
| Frequenz - Iwwergang | - | - | - | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V | 1000 @ 5A, 3V | - | 1000 @ 5A, 3V |
| Package protegéieren | Bag | Tube | Bulk | Tube |
| Serie | - | - | - | - |
| Power - Max | 65 W | 2 W | - | 2 W |
| Supplier Device Package | TO-220 | TO-220 | TO-3 | TO-220 |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 60 V | - | 60 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-204AA, TO-3 | TO-220-3 |
| Aktuell - Sammler (Ic) (Max) | 10 A | 10 A | - | 10 A |
| Transistor Type | PNP - Darlington | PNP - Darlington | NPN | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A | 3V @ 100mA, 10A | - | 3V @ 100mA, 10A |
Eroflueden 2N6668 PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir 2N6668 - NTE Electronics, Inc.
2N6661Microchip TechnologyMOSFET N-CH 90V 350MA TO392N6667GonsemiTRANS PNP DARL 60V 10A TO2202N6678Solid State Inc.TRANS NPN TO32N6660Solid State Inc.MOSFET N-CH 60V 1.1A TO39
2N6668GAMI Semiconductor/onsemi2N6667onsemiTRANS PNP DARL 60V 10A TO220
2N6715onsemiTRANS NPN 40V 2A TO92-3
2N6678Microchip TechnologyTRANS NPN 400V 15A TO204AD2N6718-TA2N6667NTE Electronics, IncTRANS PNP DARL 60V 10A TO220
2N6661Vishay SiliconixMOSFET N-CH 90V 860MA TO392N6668STMicroelectronicsTRANS PNP DARL 80V 10A TO2202N6660Vishay SiliconixMOSFET N-CH 60V 990MA TO205AD2N6717NS2N6718CJ2N6704ISC2N6661Solid State Inc.MOSFET N-CH 90V 900MA TO392N6688HARRIS| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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