2N5416 Tech Spezifikatioune
NTE Electronics, Inc - 2N5416 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - 2N5416
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA | |
| Transistor Type | PNP | |
| Supplier Device Package | TO-39 | |
| Serie | - | |
| Power - Max | 1 W | |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bag | |
| Operatioun Temperatur | - | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 15MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V | |
| Aktuell - Kollektorat Cutoff (Max) | 50µA | |
| Aktuell - Sammler (Ic) (Max) | 1 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc 2N5416.
| Produktiounsattriff | |
 |
 |
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|---|---|---|---|---|
| Part Number | 2N5416 | 2N5401TA | 2N5416 | 2N5401YTA |
| Hiersteller | NTE Electronics, Inc | onsemi | Microchip Technology | onsemi |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Bag | Tape & Box (TB) | Bulk | Cut Tape (CT) |
| Package / Case | TO-205AD, TO-39-3 Metal Can | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-205AA, TO-5-3 Metal Can | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Aktuell - Kollektorat Cutoff (Max) | 50µA | 50nA (ICBO) | 1mA | - |
| Aktuell - Sammler (Ic) (Max) | 1 A | 600 mA | 1 A | 600 mA |
| Transistor Type | PNP | PNP | PNP | PNP |
| Serie | - | - | - | - |
| Supplier Device Package | TO-39 | TO-92-3 | TO-5AA | TO-92-3 |
| Voltage - Collector Emitter Breakdown (Max) | 300 V | 150 V | 300 V | 150 V |
| Power - Max | 1 W | 625 mW | 750 mW | 625 mW |
| Operatioun Temperatur | - | -55°C ~ 150°C (TJ) | -65°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) |
| Frequenz - Iwwergang | 15MHz | 400MHz | - | 400MHz |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA | 500mV @ 5mA, 50mA | 2V @ 5mA, 50mA | 500mV @ 5mA, 50mA |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V | 60 @ 10mA, 5V | 30 @ 50mA, 10V | 60 @ 10mA, 5V |
Eroflueden 2N5416 PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir 2N5416 - NTE Electronics, Inc.
2N5424MOTOROLAIGBT Module2N5401TAonsemiTRANS PNP 150V 0.6A TO92-32N5416Microchip TechnologyPNP TRANSISTORS2N5401YTAonsemiTRANS PNP 150V 0.6A TO92-3
2N5444Solid State Inc.TO 48 40 AMP TRIAC2N5401S-RTK/PKEC
2N5415STMicroelectronicsTRANS PNP 200V 1A TO392N5441MOTOROLAIGBT Module2N5415Solid State Inc.TRANS PNP 200V 1A TO392N5443MOTOROLAIGBT Module2N5423MOTOROLAIGBT Module2N5416STMicroelectronicsTRANS PNP 300V 1A TO392N5415Microchip TechnologyPNP TRANSISTORS
2N5432-E3Electro-Films (EFI) / Vishay2N5401S-RTKKEC
2N5401YBUonsemiTRANS PNP 150V 0.6A TO92-32N5442MOTOROLAIGBT Module
2N5415onsemiTRANS PNP 200V 0.1A TO39| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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