1N829A Tech Spezifikatioune
NTE Electronics, Inc - 1N829A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - 1N829A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Zener (nom) (Vz) | 6.2 V | |
| Toleranz | ±5% | |
| Supplier Device Package | DO-35 (DO-204AH) | |
| Serie | - | |
| Power - Max | 500 mW |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bag | |
| Operatioun Temperatur | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Impedanz (Max) (Zzt) | 10 Ohms | |
| Aktuell - Reverse Leakage @ Vr | 2 µA @ 3 V |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc 1N829A.
| Produktiounsattriff | |
|
 |
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|---|---|---|---|---|
| Part Number | 1N829A | 1N825A | TZX15B-TAP | 1N827A |
| Hiersteller | NTE Electronics, Inc | NTE Electronics, Inc | Vishay General Semiconductor - Diodes Division | NTE Electronics, Inc |
| Power - Max | 500 mW | 500 mW | 500 mW | 500 mW |
| Voltage - Zener (nom) (Vz) | 6.2 V | 6.2 V | 15 V | 6.2 V |
| Package protegéieren | Bag | Bag | Cut Tape (CT) | Bag |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Reverse Leakage @ Vr | 2 µA @ 3 V | 2 µA @ 3 V | 1 µA @ 11.5 V | 2 µA @ 3 V |
| Operatioun Temperatur | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 175°C |
| Impedanz (Max) (Zzt) | 10 Ohms | 10 Ohms | 40 Ohms | 10 Ohms |
| Toleranz | ±5% | ±5% | - | ±5% |
| Serie | - | - | Automotive, AEC-Q101, TZX | - |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
| Supplier Device Package | DO-35 (DO-204AH) | DO-35 (DO-204AH) | DO-35 (DO-204AH) | DO-35 (DO-204AH) |
Eroflueden 1N829A PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir 1N829A - NTE Electronics, Inc.
1N825ANTE Electronics, IncDIODE ZENER 6.2V 500MW DO35TZX15B-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 15V 500MW DO351N827ANTE Electronics, IncDIODE ZENER 6.2V 500MW DO35
1N821UR-1Microchip TechnologyDIODE ZENER 6.2V 500MW DO213AA1N80 MOS
1N825AMicrochip TechnologyDIODE ZENER 6.2V 500MW DO351N823ANTE Electronics, IncDIODE ZENER 6.2V 500MW DO351N829ASolid State Inc.DIODE ZENER 6.2V 400MW DO351N827ASolid State Inc.DIODE ZENER 6.2V 400MW DO35
TZMC56-GS08Vishay General Semiconductor - Diodes DivisionDIODE ZENER 56V 500MW SOD801N823AMicrochip TechnologyDIODE ZENER 6.2V 500MW DO351N82AGNJS1N827AMicrochip TechnologyDIODE ZENER 6.2V 500MW DO35
1N2970RASolid State Inc.DO4 10 WATT ZENER DIODES
1N3346Solid State Inc.DO5 50 WATT ZENER DIODES1N829AMicrochip TechnologyDIODE ZENER 6.2V 500MW DO351N823ASolid State Inc.DIODE ZENER 6.2V 400MW DO351N825ASolid State Inc.DIODE ZENER 6.2V 400MW DO35| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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