1N5062 Tech Spezifikatioune
NTE Electronics, Inc - 1N5062 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - 1N5062
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 800 V | |
| Technologie | Avalanche | |
| Supplier Device Package | SOD-57 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SOD-57, Axial | |
| Package protegéieren | Bag | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 800 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 40pF @ 0V, 1MHz |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc 1N5062.
| Produktiounsattriff | |
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|
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|---|---|---|---|---|
| Part Number | 1N5062 | 1N5059GP-E3/54 | 1N5061 | 1N5062GP-E3/73 |
| Hiersteller | NTE Electronics, Inc | Vishay General Semiconductor - Diodes Division | NTE Electronics, Inc | Vishay General Semiconductor - Diodes Division |
| Package / Case | SOD-57, Axial | DO-204AC, DO-15, Axial | SOD-64, Axial | DO-204AC, DO-15, Axial |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 800 V | 5 µA @ 200 V | 1 µA @ 600 V | 5 µA @ 800 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 1A | 2A | 1A |
| Package protegéieren | Bag | Tape & Reel (TR) | Bag | Tape & Box (TB) |
| Serie | - | SUPERECTIFIER® | - | SUPERECTIFIER® |
| Supplier Device Package | SOD-57 | DO-204AC (DO-15) | SOD-64 | DO-204AC (DO-15) |
| Reverse Recovery Time (trr) | 4 µs | 2 µs | 4 µs | 2 µs |
| Capacitance @ Vr, F. | 40pF @ 0V, 1MHz | 15pF @ 4V, 1MHz | 40pF @ 0V, 1MHz | 15pF @ 4V, 1MHz |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | 1.2 V @ 1 A | 1.15 V @ 2.5 A | 1.2 V @ 1 A |
| Voltage - DC Reverse (Vr) (Max) | 800 V | 200 V | 600 V | 800 V |
| Technologie | Avalanche | Standard | Standard | Standard |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden 1N5062 PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir 1N5062 - NTE Electronics, Inc.
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1N5061-TRElectro-Films (EFI) / Vishay1N5062GP-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 800V 1A DO204AC1N5061GP-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 1A DO204AC1N5179APD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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