1N4750A Tech Spezifikatioune
NTE Electronics, Inc - 1N4750A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NTE Electronics, Inc - 1N4750A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NTE Electronics, Inc. | |
| Voltage - Zener (nom) (Vz) | 27 V | |
| Toleranz | ±0.5% | |
| Supplier Device Package | Axial | |
| Serie | - | |
| Power - Max | 1 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | Axial | |
| Package protegéieren | Bag | |
| Operatioun Temperatur | -65°C ~ 20°C | |
| Mounting Type | Through Hole | |
| Impedanz (Max) (Zzt) | 35 Ohms | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 20.6 V |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NTE Electronics, Inc 1N4750A.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | 1N4750A | 1N4749A-TAP | 1N4750A | 1N4749A |
| Hiersteller | NTE Electronics, Inc | Vishay General Semiconductor - Diodes Division | Fairchild Semiconductor | Fairchild Semiconductor |
| Impedanz (Max) (Zzt) | 35 Ohms | 25 Ohms | 35 Ohms | - |
| Operatioun Temperatur | -65°C ~ 20°C | 175°C (TJ) | -65°C ~ 20°C | - |
| Package / Case | Axial | DO-204AL, DO-41, Axial | Axial | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Supplier Device Package | Axial | DO-204AL (DO-41) | Axial | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 20.6 V | 5 µA @ 18.2 V | 5 µA @ 20.6 V | - |
| Package protegéieren | Bag | Cut Tape (CT) | Bulk | Bulk |
| Voltage - Zener (nom) (Vz) | 27 V | 24 V | 27 V | - |
| Toleranz | ±0.5% | ±5% | ±0.5% | - |
| Serie | - | Automotive, AEC-Q101 | - | * |
| Power - Max | 1 W | 1.3 W | 1 W | - |
Eroflueden 1N4750A PDF DataDhusts an NTE Electronics, Inc Dokumentatioun fir 1N4750A - NTE Electronics, Inc.
1N4749A-TAONTC1N4749A-G/TRPANJIT1N4749A-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 24V 1.3W DO204AL
1N4749A 1W 24VSTMicroelectronics1N4750AFairchild SemiconductorZENER DIODE, 27V, 5%, 1W
1N4750A-E3/73Electro-Films (EFI) / Vishay1N4749AFairchild SemiconductorZENER DIODE, 24V, 5%, 1W1N4750A-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 27V 1.3W DO411N4749AEIC SEMICONDUCTOR INC.DIODE ZENER 24V 1W DO411N4750A-27VTCON
1N4750ATRonsemiDIODE ZENER 27V 1W DO411N4750ASMC Diode SolutionsDIODE ZENER 27V 1W DO411N4750A-TRVishay General Semiconductor - Diodes DivisionDIODE ZENER 27V 1.3W DO411N4750AEIC SEMICONDUCTOR INC.DIODE ZENER 27V 1W DO411N4750ATaiwan Semiconductor CorporationDIODE ZENER 27V 1W DO204AL1N4750AonsemiDIODE ZENER 27V 1W DO411N4750AMicrochip TechnologyVOLTAGE REGULATOR1N4750STMicroelectronics| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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