JANTXV2N6796 Tech Spezifikatioune
Microsemi Corporation - JANTXV2N6796 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - JANTXV2N6796
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-205AF (TO-39) | |
| Serie | Military, MIL-PRF-19500/557 | |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 8A, 10V | |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | |
| Package / Case | TO-205AF Metal Can |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Gate Charge (Qg) (Max) @ Vgs | 28.51 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation JANTXV2N6796.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | JANTXV2N6796 | JANTXV2N6798 | JANTXV2N7225 | JANTXV2N7236 |
| Hiersteller | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | 800mW (Ta), 25W (Tc) | 4W (Ta), 150W (Tc) | 4W (Ta), 125W (Tc) |
| Package / Case | TO-205AF Metal Can | TO-205AF Metal Can | TO-254-3, TO-254AA (Straight Leads) | TO-254-3, TO-254AA (Straight Leads) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 200 V | 100 V |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 5.5A (Tc) | 27.4A (Tc) | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 8A, 10V | 420mOhm @ 5.5A, 10V | 105mOhm @ 27.4A, 10V | 220mOhm @ 18A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Serie | Military, MIL-PRF-19500/557 | Military, MIL-PRF-19500/557 | Military, MIL-PRF-19500/592 | Military, MIL-PRF-19500/595 |
| Supplier Device Package | TO-205AF (TO-39) | TO-205AF (TO-39) | TO-254AA | TO-254AA |
| Gate Charge (Qg) (Max) @ Vgs | 28.51 nC @ 10 V | 42.07 nC @ 10 V | 115 nC @ 10 V | 60 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
Eroflueden JANTXV2N6796 PDF DataDhusts an Microsemi Corporation Dokumentatioun fir JANTXV2N6796 - Microsemi Corporation.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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