APT60M80JVR Tech Spezifikatioune
Microsemi Corporation - APT60M80JVR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - APT60M80JVR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Vgs (th) (Max) @ Id | 4V @ 5mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ISOTOP® | |
| Serie | POWER MOS V® | |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 10V | |
| Power Dissipation (Max) | 568W (Tc) | |
| Package / Case | SOT-227-4, miniBLOC | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 14500 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 870 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation APT60M80JVR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | APT60M80JVR | APT60M60JFLL | APT60M75JLL | APT60M75JVR |
| Hiersteller | Microsemi Corporation | Microchip Technology | Microchip Technology | Microchip Technology |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Supplier Device Package | ISOTOP® | ISOTOP® | ISOTOP® | ISOTOP® |
| Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 10V | 60mOhm @ 35A, 10V | 75mOhm @ 29A, 10V | 75mOhm @ 500mA, 10V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 870 nC @ 10 V | 289 nC @ 10 V | 195 nC @ 10 V | 1050 nC @ 10 V |
| Power Dissipation (Max) | 568W (Tc) | 694W (Tc) | 595W (Tc) | 700W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 14500 pF @ 25 V | 12630 pF @ 25 V | 8930 pF @ 25 V | 19800 pF @ 25 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Vgs (th) (Max) @ Id | 4V @ 5mA | 5V @ 5mA | 5V @ 5mA | 4V @ 5mA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | 70A (Tc) | 58A (Tc) | 62A (Tc) |
| Serie | POWER MOS V® | POWER MOS 7® | POWER MOS 7® | POWER MOS V® |
Eroflueden APT60M80JVR PDF DataDhusts an Microsemi Corporation Dokumentatioun fir APT60M80JVR - Microsemi Corporation.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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