APT11GF120BRDQ1G Tech Spezifikatioune
Microsemi Corporation - APT11GF120BRDQ1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - APT11GF120BRDQ1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 3V @ 15V, 8A | |
| Test Condition | 800V, 8A, 10Ohm, 15V | |
| Td (on / off) @ 25 ° C | 7ns/100ns | |
| Energie schalten | 300µJ (on), 285µJ (off) | |
| Supplier Device Package | TO-247 [B] | |
| Serie | - | |
| Power - Max | 156 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 65 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 24 A | |
| Aktuell - Sammler (Ic) (Max) | 25 A | |
| Basis Produktnummer | APT11G |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation APT11GF120BRDQ1G.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | APT11GF120BRDQ1G | APT12040JVR | APT10M25SVR | APT1201R4SFLLG |
| Hiersteller | Microsemi Corporation | Microchip Technology | APT | Microsemi |
| Supplier Device Package | TO-247 [B] | SOT-227 (ISOTOP®) | - | - |
| Energie schalten | 300µJ (on), 285µJ (off) | - | - | - |
| Vce (on) (Max) @ Vge, Ic | 3V @ 15V, 8A | - | - | - |
| Input Type | Standard | - | - | - |
| IGBT Type | NPT | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Serie | - | POWER MOS V® | - | - |
| Mounting Type | Through Hole | Chassis Mount | - | - |
| Package / Case | TO-247-3 | SOT-227-4, miniBLOC | - | - |
| Basis Produktnummer | APT11G | APT12040 | - | - |
| Aktuell - Sammler Pulséiert (Icm) | 24 A | - | - | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | - | - | - |
| Test Condition | 800V, 8A, 10Ohm, 15V | - | - | - |
| Power - Max | 156 W | - | - | - |
| Td (on / off) @ 25 ° C | 7ns/100ns | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 25 A | - | - | - |
| Package protegéieren | Tube | Tube | - | - |
| Gate Charge | 65 nC | - | - | - |
Eroflueden APT11GF120BRDQ1G PDF DataDhusts an Microsemi Corporation Dokumentatioun fir APT11GF120BRDQ1G - Microsemi Corporation.
APT12040JVRMicrochip TechnologyMOSFET N-CH 1200V 26A SOT227APT10M25SVRAPTIGBT ModuleAPT1201R4SFLLGMicrosemi
APT1201R6BVFRGMicrochip TechnologyMOSFET N-CH 1200V 8A TO247APT12031JLLAPTIGBT Module
APT12031JFLLMicrochip TechnologyMOSFET N-CH 1200V 30A ISOTOPAPT10M19SVRAPTIGBT ModuleAPT10M15JNRMicrosemiIGBT ModuleAPT1147APTIGBT ModuleAPT1201R6SVFRGMicrochip TechnologyMOSFET N-CH 1200V 8A D3PAKAPT1201R6BVRAPTIGBT ModuleAPT10M11LVRAPTAPT10M19BVRVBSEMIAPT110GL100JNAPTIGBT ModuleAPT10SCD65KMicrosemi CorporationDIODE SIL CARB 650V 17A TO220APT12040JVFRAPTIGBT ModuleAPT10M30AVRAPTIGBT ModuleAPT1201R5BVRAPT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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