2N6796 Tech Spezifikatioune
Microsemi Corporation - 2N6796 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - 2N6796
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-39 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V | |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | |
| Package / Case | TO-205AF Metal Can |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Gate Charge (Qg) (Max) @ Vgs | 6.34 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation 2N6796.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | 2N6796 | 2N6798 | 2N6804 | 2N6786 |
| Hiersteller | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Harris Corporation |
| Serie | - | - | - | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | 800mW (Ta), 25W (Tc) | 4W (Ta), 75W (Tc) | 15W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 6.34 nC @ 10 V | 5.29 nC @ 10 V | 29 nC @ 10 V | 12 nC @ 10 V |
| Vgs (th) (Max) @ Id | 4V @ 250mA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 5.5A (Tc) | 11A (Tc) | 1.25A (Tc) |
| Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 100 V | 400 V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 10V | 400mOhm @ 3.5A, 10V | 360mOhm @ 11A, 10V | 3.7Ohm @ 1.25A, 10V |
| Supplier Device Package | TO-39 | TO-39 | TO-204AA (TO-3) | TO-205AF (TO-39) |
| Package / Case | TO-205AF Metal Can | TO-205AF Metal Can | TO-204AA, TO-3 | TO-205AF Metal Can |
Eroflueden 2N6796 PDF DataDhusts an Microsemi Corporation Dokumentatioun fir 2N6796 - Microsemi Corporation.
2N6788CDBNSILICONIX
2N681Central Semiconductor CorpSCR 25V 25A TO482N6798Microsemi CorporationMOSFET N-CH 200V 5.5A TO392N6796UJANTXIR
2N6769AMI Semiconductor/onsemi
2N681ASolid State Inc.TO 48 25 AMP SCR2N6804Microsemi CorporationMOSFET P-CH 100V 11A TO204AA2N6794IR2N6786UIR2N6786Harris CorporationN-CHANNEL POWER MOSFET2N6788Microsemi CorporationMOSFET N-CH 100V 6A TO392N6788JANTXIR2N681ACentral Semiconductor CorpSCR 25V 25A TO482N681Solid State Inc.TO 48 25 AMP SCR2N6782Microsemi CorporationMOSFET N-CH 100V 3.5A TO392N6796UMicrosemi CorporationMOSFET N-CH 100V 8A 18ULCC2N6800Microsemi CorporationMOSFET N-CH 400V 3A TO392N6784Microsemi CorporationMOSFET N-CH 200V 2.25A TO39| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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