2N6756 Tech Spezifikatioune
Microsemi Corporation - 2N6756 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - 2N6756
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-204AA | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 14A, 10V | |
| Power Dissipation (Max) | 4W (Ta), 75W (Tc) | |
| Package / Case | TO-204AA, TO-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation 2N6756.
| Produktiounsattriff |  |
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|
|
|---|---|---|---|---|
| Part Number | 2N6756 | 2N6766 | 2N6788 | 2N6756 |
| Hiersteller | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Harris Corporation |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 100 V | 100 V |
| Supplier Device Package | TO-204AA | TO-3 | TO-39 | TO-204AA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 115 nC @ 10 V | 18 nC @ 10 V | 35 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Tc) | 30A (Tc) | 6A (Tc) | 14A (Tc) |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 14A, 10V | 90mOhm @ 30A, 10V | 300mOhm @ 3.5A, 10V | 210mOhm @ 14A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Package / Case | TO-204AA, TO-3 | TO-204AE | TO-205AF Metal Can | TO-204AA, TO-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 4W (Ta), 75W (Tc) | 4W (Ta), 150W (Tc) | 800mW (Tc) | 4W (Ta), 75W (Tc) |
Eroflueden 2N6756 PDF DataDhusts an Microsemi Corporation Dokumentatioun fir 2N6756 - Microsemi Corporation.
2N6758 TO-3IR2N6786UIR
2N6726onsemiTRANS PNP 30V 2A TO2372N6766Microsemi CorporationMOSFET N-CH 200V 30A TO32N6788CDBNSILICONIX2N6788Microsemi CorporationMOSFET N-CH 100V 6A TO392N6769AMI Semiconductor/onsemi2N6730NTE Electronics, IncTRANS PNP 100V 2A TO2372N6756Harris CorporationN-CHANNEL POWER MOSFET2N6718V2N6724onsemiTRANS NPN DARL 40V 1A TO2372N6782Microsemi CorporationMOSFET N-CH 100V 3.5A TO392N6718L-B-T6C-KUTC2N6786Harris CorporationN-CHANNEL POWER MOSFET2N6725onsemiTRANS NPN DARL 50V 1A TO2372N6784Microsemi CorporationMOSFET N-CH 200V 2.25A TO392N6725NTE Electronics, IncTRANS NPN DARL 50V 1A TO2372N6718L-AUTC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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