ES1B-LTP Tech Spezifikatioune
Micro Commercial Co - ES1B-LTP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Micro Commercial Co - ES1B-LTP
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Micro Commercial Components (MCC) | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-214AC (SMA) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AC, SMA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | |
| Basis Produktnummer | ES1B |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Micro Commercial Co ES1B-LTP.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | ES1B-LTP | ES1B-TP | ES1B-13-F | ES1B-E3/61T |
| Hiersteller | Micro Commercial Co | Micro Commercial Co | Diodes Incorporated | Vishay General Semiconductor - Diodes Division |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 100 V | 5 µA @ 100 V | 5 µA @ 100 V |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -50°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Reverse Recovery Time (trr) | 35 ns | 50 ns | 25 ns | 25 ns |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Supplier Device Package | DO-214AC (SMA) | DO-214AC (HSMA) | SMA | DO-214AC (SMA) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V |
| Basis Produktnummer | ES1B | ES1B | ES1B | ES1 |
| Package / Case | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA |
| Serie | - | - | - | - |
| Capacitance @ Vr, F. | 15pF @ 4V, 1MHz | - | 10pF @ 4V, 1MHz | 10pF @ 4V, 1MHz |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | 975 mV @ 1 A | 920 mV @ 1 A | 920 mV @ 1 A |
Eroflueden ES1B-LTP PDF DataDhusts an Micro Commercial Co Dokumentatioun fir ES1B-LTP - Micro Commercial Co.
ES1B-TR
ES1B-TMicrel / Microchip TechnologyES1B-NLFSCES1B-TPMicro Commercial CoDIODE GEN PURP 100V 1A DO214ACES1BT/RPANJIT
ES1A_NLFairchild (onsemi)
ES1B F3Taiwan SemiconductorES1B-13-FDiodes IncorporatedDIODE GEN PURP 100V 1A SMAES1BL R2GTaiwan SemiconductorES1B-E3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 1A DO214ACES1A-M3/61TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 1A DO214AC
ES1B-2/5ATElectro-Films (EFI) / VishayES1B/61TElectro-Films (EFI) / VishayES1B/13TElectro-Films (EFI) / VishayES1B-R1-00101PANJITES1B T/RPANJITES1AHE3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 1A DO214ACES1B-2GSI Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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