VP3203N3-G Tech Spezifikatioune
Microchip Technology - VP3203N3-G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - VP3203N3-G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 3.5V @ 10mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-92-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | |
| Power Dissipation (Max) | 740mW (Ta) | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Package protegéieren | Bag |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 650mA (Tj) | |
| Basis Produktnummer | VP3203 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology VP3203N3-G.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | VP3203N3-G | STW28NM60ND | IRFL024ZPBF | SI6410DQ-T1-GE3 |
| Hiersteller | Microchip Technology | STMicroelectronics | Infineon Technologies | Vishay Siliconix |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V | 150mOhm @ 11.5A, 10V | 57.5mOhm @ 3.1A, 10V | 14mOhm @ 7.8A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | - | FDmesh™ II | HEXFET® | TrenchFET® |
| Basis Produktnummer | VP3203 | STW28 | - | SI6410 |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Bag | Tube | Tube | Tape & Reel (TR) |
| Vgs (Max) | ±20V | ±25V | ±20V | ±20V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 3.5V @ 10mA | 5V @ 250µA | 4V @ 250µA | 1V @ 250µA (Min) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 650mA (Tj) | 23A (Tc) | 5.1A (Ta) | 7.8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | 2090 pF @ 100 V | 340 pF @ 25 V | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 600 V | 55 V | 30 V |
| Power Dissipation (Max) | 740mW (Ta) | 190W (Tc) | 1W (Ta) | 1.5W (Ta) |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Supplier Device Package | TO-92-3 | TO-247-3 | SOT-223 | 8-TSSOP |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-247-3 | TO-261-4, TO-261AA | 8-TSSOP (0.173", 4.40mm Width) |
Eroflueden VP3203N3-G PDF DataDhusts an Microchip Technology Dokumentatioun fir VP3203N3-G - Microchip Technology.
VP3085Texas Instruments
VP3203N3SUPERTEXVP386PAGNAVP3082EDRTISN65HVD3082DRVP3-0055COOPERVP3205N8-GSUPERTEXSTW28NM60NDSTMicroelectronicsMOSFET N-CH 600V 23A TO247VP3082Texas InstrumentsIRFL024ZPBFInfineon TechnologiesMOSFET N-CH 55V 5.1A SOT223VP3082DRTexas Instruments
VP3225K401R275KEMETVARISTOR 430V 400A 2SMD JLEADVP3062-V1.0NS
VP301NAMI Semiconductor/onsemiSI6410DQ-T1-GE3Vishay SiliconixMOSFET N-CH 30V 8TSSOP
VP3203N8-GMicrochip TechnologyMOSFET P-CH 30V 1.1A TO243AAVP3162STG5VIVAVP32DRTexas InstrumentsVP3203N8SUPERTEX| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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