VN2210N3-G Tech Spezifikatioune
Microchip Technology - VN2210N3-G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - VN2210N3-G
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Microchip Technology | |
Vgs (th) (Max) @ Id | 2.4V @ 10mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-92-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V | |
Power Dissipation (Max) | 740mW (Tc) | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
Package protegéieren | Bag |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Tj) | |
Basis Produktnummer | VN2210 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology VN2210N3-G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VN2210N3-G | VN2210N2 | VN2222LLG | VN2106N3-G |
Hiersteller | Microchip Technology | Microchip Technology | onsemi | Microchip Technology |
Package protegéieren | Bag | Bag | Bulk | Bag |
Vgs (th) (Max) @ Id | 2.4V @ 10mA | 2.4V @ 10mA | 2.5V @ 1mA | 2.4V @ 1mA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 60 V | 60 V |
Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V | 350mOhm @ 4A, 10V | 7.5Ohm @ 500mA, 10V | 4Ohm @ 500mA, 10V |
Supplier Device Package | TO-92-3 | TO-39 | TO-92 (TO-226) | TO-92-3 |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 10V | 5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V | 500 pF @ 25 V | 60 pF @ 25 V | 50 pF @ 25 V |
Serie | - | - | - | - |
Basis Produktnummer | VN2210 | VN2210 | VN2222 | VN2106 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Tj) | 1.7A (Tj) | 150mA (Ta) | 300mA (Tj) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 740mW (Tc) | 360mW (Tc) | 400mW (Ta) | 1W (Tc) |
FET Feature | - | - | - | - |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-205AD, TO-39-3 Metal Can | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226-3, TO-92-3 (TO-226AA) |
Eroflueden VN2210N3-G PDF DataDhusts an Microchip Technology Dokumentatioun fir VN2210N3-G - Microchip Technology.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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