TP2104N3-G Tech Spezifikatioune
Microchip Technology - TP2104N3-G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - TP2104N3-G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 2V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-92-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V | |
| Power Dissipation (Max) | 740mW (Ta) | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Package protegéieren | Bag |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 175mA (Tj) | |
| Basis Produktnummer | TP2104 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology TP2104N3-G.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | TP2104N3-G | TP2104K1-G | TP2014 | TP2121U-TR |
| Hiersteller | Microchip Technology | Microchip Technology | SUPERTEX | 3PEAK |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Mounting Type | Through Hole | Surface Mount | - | - |
| Serie | - | - | - | - |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-236-3, SC-59, SOT-23-3 | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | 60 pF @ 25 V | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C | - | - |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | - | - |
| Supplier Device Package | TO-92-3 | TO-236AB (SOT23) | - | - |
| FET Typ | P-Channel | P-Channel | - | - |
| Package protegéieren | Bag | Tape & Reel (TR) | - | - |
| Basis Produktnummer | TP2104 | TP2104 | - | - |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V | 6Ohm @ 500mA, 10V | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 175mA (Tj) | 160mA (Tj) | - | - |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 740mW (Ta) | 360mW (Ta) | - | - |
| Vgs (th) (Max) @ Id | 2V @ 1mA | 2V @ 1mA | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
Eroflueden TP2104N3-G PDF DataDhusts an Microchip Technology Dokumentatioun fir TP2104N3-G - Microchip Technology.
TP2014SUPERTEXTP2121U-TR3PEAKTP2104N3SUPERTEXTP2121-CR3PEAK
TP2020LElectro-Films (EFI) / VishayTP2106K1-GMSVTP2012-VR3peakTP2121-TR3PEAKTP2050TRIPATHTP2051TRIPATHTP2104K1-GMicrochip TechnologyMOSFET P-CH 40V 160MA TO236ABTP2104K1SUPERTEXTP2111-TR3PEAKTP2106N3SUPERTEXTP2122-SR3PEAKTP2021-TR3PEAKTP2121-SR3PEAKTP2112-SR3PEAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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