JAN2N3584 Tech Spezifikatioune
Microchip Technology - JAN2N3584 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - JAN2N3584
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Collector Emitter Breakdown (Max) | 250 V | |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-66 (TO-213AA) | |
| Serie | Military, MIL-PRF-19500/384 | |
| Power - Max | 2.5 W | |
| Package / Case | TO-213AA, TO-66-2 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -65°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | - | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 25 @ 1A, 10V | |
| Aktuell - Kollektorat Cutoff (Max) | 5mA | |
| Aktuell - Sammler (Ic) (Max) | 2 A |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology JAN2N3584.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | JAN2N3584 | JAN2N3737 | JAN2N3762 | JAN2N3442 |
| Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Serie | Military, MIL-PRF-19500/384 | Military, MIL-PRF-19500/395 | Military, MIL-PRF-19500/396 | Military, MIL-PRF-19500/370 |
| Frequenz - Iwwergang | - | - | - | - |
| Aktuell - Kollektorat Cutoff (Max) | 5mA | 10µA (ICBO) | 10µA (ICBO) | - |
| Aktuell - Sammler (Ic) (Max) | 2 A | 1.5 A | 1.5 A | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V | 40 V | 40 V | 140 V |
| Package / Case | TO-213AA, TO-66-2 | TO-206AB, TO-46-3 Metal Can | TO-205AD, TO-39-3 Metal Can | TO-204AA, TO-3 |
| Operatioun Temperatur | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A | 900mV @ 100mA, 1A | 900mV @ 100mA, 1A | 1V @ 300mA, 3A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Transistor Type | NPN | NPN | PNP | NPN |
| Power - Max | 2.5 W | 500 mW | 1 W | 6 W |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 25 @ 1A, 10V | 20 @ 1A, 1.5V | 30 @ 1A, 1.5V | 20 @ 3A, 4V |
| Supplier Device Package | TO-66 (TO-213AA) | TO-46-3 | TO-39 (TO-205AD) | TO-3 (TO-204AA) |
Eroflueden JAN2N3584 PDF DataDhusts an Microchip Technology Dokumentatioun fir JAN2N3584 - Microchip Technology.
JAN2N3599MicrosemiIGBT ModuleJAN2N3114MSCJAN2N3737Microchip TechnologyTRANS NPN 40V 1.5A TO46-3JAN2N3762Microchip TechnologyTRANS PNP 40V 1.5A TO39JAN2N3095PRXIGBT ModuleJAN2N3442Microchip TechnologyTRANS NPN 140V 10A TO3JAN2N3624MicrosemiIGBT ModuleJAN2N3055Microchip TechnologyTRANS NPN 70V 15A TO3JAN2N3822MSCJAN2N3266MicrosemiIGBT ModuleJAN2N3420Microchip TechnologyTRANS NPN 60V 3A TO39
JAN2N3700Microchip TechnologyTRANS NPN 80V 1A TO18JAN2N3421Microchip TechnologyTRANS NPN 80V 3A TO5JAN2N3597MicrosemiIGBT ModuleJAN2N3719MSCJAN2N3499Microchip TechnologyTRANS NPN 100V 0.5A TO39JAN2N3625MicrosemiIGBT ModuleJAN2N3501Microchip TechnologyTRANS NPN 150V 0.3A TO39| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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