APT56M60L Tech Spezifikatioune
Microchip Technology - APT56M60L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT56M60L
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Microchip Technology | |
Vgs (th) (Max) @ Id | 5V @ 2.5mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-264 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 28A, 10V | |
Power Dissipation (Max) | 1040W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
Basis Produktnummer | APT56M60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT56M60L.
Produktiounsattriff | ||||
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Part Number | APT56M60L | APT58M50JU2 | APT56F60B2 | APT55M50JFLL |
Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | Microsemi Corporation |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Supplier Device Package | TO-264 | SOT-227 | T-MAX™ [B2] | ISOTOP® |
Vgs (th) (Max) @ Id | 5V @ 2.5mA | 5V @ 2.5mA | 5V @ 2.5mA | 5V @ 5mA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Through Hole | Chassis Mount | Through Hole | Chassis Mount |
Package protegéieren | Tube | Bulk | Tube | Tube |
Basis Produktnummer | APT56M60 | APT58M50 | APT56F60 | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 58A (Tc) | 60A (Tc) | 77A (Tc) |
Rds On (Max) @ Id, Vgs | 130mOhm @ 28A, 10V | 65mOhm @ 42A, 10V | 110mOhm @ 28A, 10V | 50mOhm @ 38.5A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V | 10800 pF @ 25 V | 11300 pF @ 25 V | 12400 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V | 340 nC @ 10 V | 280 nC @ 10 V | 265 nC @ 10 V |
Package / Case | TO-264-3, TO-264AA | SOT-227-4, miniBLOC | TO-247-3 Variant | SOT-227-4, miniBLOC |
Serie | - | POWER MOS 8™ | POWER MOS 8™ | POWER MOS 7® |
Power Dissipation (Max) | 1040W (Tc) | 543W (Tc) | 1040W (Tc) | 694W (Tc) |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 600 V | 550 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden APT56M60L PDF DataDhusts an Microchip Technology Dokumentatioun fir APT56M60L - Microchip Technology.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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