APT33GF120B2RDQ2G Tech Spezifikatioune
Microchip Technology - APT33GF120B2RDQ2G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT33GF120B2RDQ2G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 3V @ 15V, 25A | |
| Test Condition | 800V, 25A, 4.3Ohm, 15V | |
| Td (on / off) @ 25 ° C | 14ns/185ns | |
| Energie schalten | 1.315mJ (on), 1.515mJ (off) | |
| Serie | - | |
| Power - Max | 357 W | |
| Package / Case | TO-247-3 Variant |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 170 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 75 A | |
| Aktuell - Sammler (Ic) (Max) | 64 A | |
| Basis Produktnummer | APT33GF120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT33GF120B2RDQ2G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | APT33GF120B2RDQ2G | APT33GF120LRDQ2G | APT33GF120BRG | APT32F101H4S6 |
| Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | APT |
| Package / Case | TO-247-3 Variant | TO-264-3, TO-264AA | TO-247-3 | - |
| Test Condition | 800V, 25A, 4.3Ohm, 15V | 800V, 25A, 4.3Ohm, 15V | - | - |
| IGBT Type | NPT | NPT | NPT | - |
| Gate Charge | 170 nC | 170 nC | 170 nC | - |
| Vce (on) (Max) @ Vge, Ic | 3V @ 15V, 25A | 3V @ 15V, 25A | 3.2V @ 15V, 25A | - |
| Aktuell - Sammler Pulséiert (Icm) | 75 A | 75 A | 104 A | - |
| Td (on / off) @ 25 ° C | 14ns/185ns | 14ns/185ns | 25ns/210ns | - |
| Basis Produktnummer | APT33GF120 | APT33GF120 | APT33GF120 | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Package protegéieren | Tube | Tube | Tube | - |
| Energie schalten | 1.315mJ (on), 1.515mJ (off) | 1.315mJ (on), 1.515mJ (off) | 2.8mJ (on), 2.8mJ (off) | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Input Type | Standard | Standard | Standard | - |
| Serie | - | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 64 A | 64 A | 52 A | - |
| Power - Max | 357 W | 357 W | 297 W | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V | 1200 V | - |
Eroflueden APT33GF120B2RDQ2G PDF DataDhusts an Microchip Technology Dokumentatioun fir APT33GF120B2RDQ2G - Microchip Technology.
APT32F101H4S6APTAPT33GF120B2RDGAPT
APT32M80JMicrochip TechnologyMOSFET N-CH 800V 33A ISOTOPAPT33GF120LRDQ2GMicrochip TechnologyIGBT 1200V 64A 357W TO264APT34M60BMicrochip TechnologyMOSFET N-CH 600V 36A TO247APT34N80B2C3GMicrochip TechnologyMOSFET N-CH 800V 34A T-MAXAPT32F101F4M6APTCHIPAPT34M120JMicrochip TechnologyMOSFET N-CH 1200V 35A SOT227APT32F101F6P6APTCHIPAPT34F100B2Microchip TechnologyMOSFET N-CH 1000V 35A T-MAXAPT34F100LMicrochip TechnologyMOSFET N-CH 1000V 35A TO264APT34M120J-LOT6APTIGBT ModuleAPT32F120JMicrochip TechnologyMOSFET N-CH 1200V 33A ISOTOP
APT3216SURCKKingbrightLED RED CLEAR CHIP SMD
APT3216SYCKKingbrightLED YELLOW CLEAR CHIP SMDAPT34F60BMicrochip TechnologyMOSFET N-CH 600V 36A TO247APT33GF120BRGMicrochip TechnologyIGBT 1200V 52A 297W TO247APT32F1023H8S6APTCHIP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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