APT1001R1BN Tech Spezifikatioune
Microchip Technology - APT1001R1BN technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT1001R1BN
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247AD | |
| Serie | POWER MOS IV® | |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.25A, 10V | |
| Power Dissipation (Max) | 310W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 1000 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT1001R1BN.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | APT1001R1BN | APT1001RBVRG | APT1001RBN | APT10021JLL |
| Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | SOT-227-4, miniBLOC |
| Entworf fir Source Voltage (Vdss) | 1000 V | 1000 V | 1000 V | 1000 V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.25A, 10V | 1Ohm @ 500mA, 10V | 1Ohm @ 5.5A, 10V | 210mOhm @ 18.5A, 10V |
| Power Dissipation (Max) | 310W (Tc) | - | 310W (Tc) | 694W (Tc) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Mounting Type | Through Hole | Through Hole | Through Hole | Chassis Mount |
| Vgs (th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 4V @ 1mA | 5V @ 5mA |
| Vgs (Max) | ±30V | - | ±30V | ±30V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 225 nC @ 10 V | 130 nC @ 10 V | 395 nC @ 10 V |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | POWER MOS IV® | POWER MOS V® | POWER MOS IV® | POWER MOS 7® |
| Supplier Device Package | TO-247AD | TO-247 [B] | TO-247AD | ISOTOP® |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | 11A (Tc) | 11A (Tc) | 37A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V | 3660 pF @ 25 V | 2950 pF @ 25 V | 9750 pF @ 25 V |
Eroflueden APT1001R1BN PDF DataDhusts an Microchip Technology Dokumentatioun fir APT1001R1BN - Microchip Technology.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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