2N5115 Tech Spezifikatioune
Microchip Technology - 2N5115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 2N5115
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Cutoff (VGS aus) @ Id | 6 V @ 1 nA | |
| Voltage - Breakdown (V (BR) GSS) | 30 V | |
| Supplier Device Package | TO-18 (TO-206AA) | |
| Serie | Military, MIL-PRF-19500 | |
| Widderstand - RDS (Deel) | 100 Ohms | |
| Power - Max | 500 mW | |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -65°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V | |
| FET Typ | P-Channel | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Drain (Idss) @ Vds (Vg = 0) | 60 mA @ 15 V | |
| Basis Produktnummer | 2N5115 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 2N5115.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | 2N5115 | 2N5114 | 2N5115 | 2N5116-E3 |
| Hiersteller | Microchip Technology | Vishay Siliconix | Central Semiconductor Corp | Vishay Siliconix |
| Voltage - Cutoff (VGS aus) @ Id | 6 V @ 1 nA | - | 3 V @ 1 nA | - |
| Supplier Device Package | TO-18 (TO-206AA) | TO-206AA (TO-18) | TO-18 | TO-206AA (TO-18) |
| FET Typ | P-Channel | - | P-Channel | - |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V | - | 25pF @ 15V | - |
| Voltage - Breakdown (V (BR) GSS) | 30 V | - | 30 V | - |
| Widderstand - RDS (Deel) | 100 Ohms | - | 100 Ohms | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -65°C ~ 200°C (TJ) | - | -65°C ~ 200°C (TJ) | - |
| Entworf fir Source Voltage (Vdss) | 30 V | - | 30 V | - |
| Basis Produktnummer | 2N5115 | 2N5114 | - | 2N5116 |
| Serie | Military, MIL-PRF-19500 | - | - | - |
| Power - Max | 500 mW | - | 500 mW | - |
| Aktuell - Drain (Idss) @ Vds (Vg = 0) | 60 mA @ 15 V | - | 15 mA @ 15 V | - |
| Package protegéieren | Bulk | Tube | Bulk | Tube |
| Package / Case | TO-206AA, TO-18-3 Metal Can | TO-206AA, TO-18-3 Metal Can | TO-206AA, TO-18-3 Metal Can | TO-206AA, TO-18-3 Metal Can |
Eroflueden 2N5115 PDF DataDhusts an Microchip Technology Dokumentatioun fir 2N5115 - Microchip Technology.
2N51352N5114Vishay SiliconixJFET P-CH TO206AA2N5115Central Semiconductor CorpJFET P-CH 30V TO182N5102MOTOROLAIGBT Module
2N5133Fairchild (onsemi)2N5116-E3Vishay SiliconixJFET P-CH TO206AA2N5115Vishay SiliconixJFET P-CH TO206AA2N5114Microchip TechnologyJFET P-CH 30V TO182N5138MOTO
2N5090Microchip TechnologyPOWER BJT
2N5116Central Semiconductor CorpJFET P-CH 30V TO18
2N5147Microchip TechnologyPOWER BJT2N5116Vishay SiliconixJFET P-CH TO206AA2N5109PBFREECentral Technologies
2N5116Solid State Inc.JFET P-CH 30V TO18
2N5109Microsemi CorporationRF TRANS NPN 20V 1.2GHZ TO39
2N5089TFRonsemiTRANS NPN 25V 0.1A TO92-32N5116Microchip TechnologyJFET P-CH 30V TO18| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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