1N6461US Tech Spezifikatioune
Microchip Technology - 1N6461US technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N6461US
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Reverse Standoff (Typ) | 5V | |
| Voltage - Klemmung (Max) @ Ipp | 9V | |
| Voltage - Ofbriechen (Min) | 5.6V | |
| Unidirektional Channels | 1 | |
| Typ | Zener | |
| Supplier Device Package | B, Axial | |
| Serie | - | |
| Power Line Protection | No |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Power - Peak Pulse | 500W | |
| Package / Case | SQ-MELF, B | |
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Aktuell - Peak Pulse (10 / 1000μs) | 315A (8/20µs) | |
| Capacitance @ Frequenz | - | |
| Basis Produktnummer | 1N6461 | |
| Applikatiounen | General Purpose |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N6461US.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 1N6461US | 1N6373 | 1N6373 | 1N6376G |
| Hiersteller | Microchip Technology | MDE Semiconductor Inc | onsemi | Littelfuse Inc. |
| Typ | Zener | Zener | Zener | Zener |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Applikatiounen | General Purpose | General Purpose | General Purpose | General Purpose |
| Unidirektional Channels | 1 | 1 | 1 | 1 |
| Voltage - Reverse Standoff (Typ) | 5V | 5V | 5V | 12V |
| Aktuell - Peak Pulse (10 / 1000μs) | 315A (8/20µs) | 160A | - | - |
| Capacitance @ Frequenz | - | - | - | - |
| Power - Peak Pulse | 500W | 1500W (1.5kW) | 1500W (1.5kW) | 1500W (1.5kW) |
| Package / Case | SQ-MELF, B | DO-201AA, DO-27, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Supplier Device Package | B, Axial | DO-201 | Axial | Axial |
| Basis Produktnummer | 1N6461 | - | 1N6373 | 1N6376 |
| Power Line Protection | No | No | No | No |
| Serie | - | ICTE/MPTE | Mosorb™ | Mosorb™ |
| Voltage - Klemmung (Max) @ Ipp | 9V | 7.5V | 9.4V | 21.2V |
| Voltage - Ofbriechen (Min) | 5.6V | 6V | 6V | 14.1V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
Eroflueden 1N6461US PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N6461US - Microchip Technology.
1N6392JANTXMSCIGBT Module1N6373MDE Semiconductor IncTVS DIODE UP 5VRWM 7.5VC
1N6478-E3/75Electro-Films (EFI) / Vishay
1N6391Microchip TechnologyDIODE SCHOTTKY 45V 25A DO203AA
1N6484-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1A DO213AB1N6392Microchip TechnologyDIODE SCHOTTKY 45V 54A DO51N6513VWI1N6517LLVMI1N6392Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 45V 60A DO203AB1N6492Microchip TechnologyDIODE SCHOTTKY 45V 3.6A TO205AF1N6478-E3/76Electro-Films (EFI) / Vishay1N6515VMI1N6373onsemiTVS DIODE 5VWM 9.4VC AXIAL1N6515LLVMI1N6376GLittelfuse Inc.TVS DIODE 12VWM 21.2VC AXIAL1N6308MSCIGBT Module1N6479-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 1A DO213AB
1N6376GonsemiTVS DIODE 12VWM 21.2VC AXIAL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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