1N6096 Tech Spezifikatioune
Microchip Technology - 1N6096 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N6096
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 600 mV @ 5 A | |
| Voltage - DC Reverse (Vr) (Max) | 40 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-203AA (DO-4) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AA, DO-4, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 1.5 mA @ 40 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N6096 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N6096.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N6096 | 1N6097 | 1N6095 | 1N6095R |
| Hiersteller | Microchip Technology | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Technologie | Schottky | Schottky | Schottky | Schottky, Reverse Polarity |
| Capacitance @ Vr, F. | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25A | 50A | 25A | 25A |
| Mounting Type | Stud Mount | Chassis, Stud Mount | Chassis, Stud Mount | Chassis, Stud Mount |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 30 V | 30 V | 30 V |
| Basis Produktnummer | 1N6096 | 1N6097 | 1N6095 | 1N6095R |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 600 mV @ 5 A | 700 mV @ 50 A | 580 mV @ 25 A | 580 mV @ 25 A |
| Supplier Device Package | DO-203AA (DO-4) | DO-5 | DO-4 | DO-4 |
| Aktuell - Reverse Leakage @ Vr | 1.5 mA @ 40 V | 5 mA @ 30 V | 2 mA @ 20 V | 2 mA @ 20 V |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AB, DO-5, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
Eroflueden 1N6096 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N6096 - Microchip Technology.
1N6097GeneSiC SemiconductorDIODE SCHOTTKY 30V 50A DO51N6095GeneSiC SemiconductorDIODE SCHOTTKY 30V 25A DO41N6095RGeneSiC SemiconductorDIODE SCHOTTKY REV 30V 25A DO4
1N6097Solid State Inc.DIODE SCHOTTKY 30V 50A DO51N6098Solid State Inc.DIODE SCHOTTKY 40V 50A DO5
1N6097Microchip TechnologySCHOTTKY RECTIFIER1N6097JANTXMOTOROLA/IRIGBT Module1N6095Microchip TechnologyDIODE SCHOTTKY 30V 25A DO203AA1N6096GeneSiC SemiconductorDIODE SCHOTTKY 40V 25A DO4
1N6068ASolid State Inc.BIDIRECTIONAL TVS D0-13
1N6075Microchip TechnologyDIODE GEN PURP 150V 850MA AXIAL1N6098GeneSiC SemiconductorDIODE SCHOTTKY 40V 50A DO51N6098Microchip TechnologyDIODE SCHOTTKY 40V 50A DO5
1N6072AMicrochip TechnologyTVS DIODE 185VWM 328VC DO131N6072ASolid State Inc.BIDIRECTIONAL TVS D0-131N6094MICROPAC1N6098JANTXMOTOROLA/IRIGBT Module
1N6097Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 30V 50A DO203AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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