1N5821 Tech Spezifikatioune
Microchip Technology - 1N5821 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N5821
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 500 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Technologie | Schottky | |
| Supplier Device Package | B, Axial | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | B, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 30 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N5821.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | 1N5821 | 1N5821 | 1N5821RL | 1N5821 |
| Hiersteller | Microchip Technology | Taiwan Semiconductor Corporation | STMicroelectronics | NTE Electronics, Inc |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | B, Axial | DO-201AD | DO-201AD | DO-201AD |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bag |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 30 V | 500 µA @ 30 V | 2 mA @ 30 V | 500 µA @ 30 V |
| Voltage - DC Reverse (Vr) (Max) | 30 V | 30 V | 30 V | 30 V |
| Voltage - Viru (Vf) (Max) @ Wann | 500 mV @ 3 A | 500 mV @ 3 A | 500 mV @ 3 A | 500 mV @ 3 A |
| Serie | - | - | - | - |
| Package / Case | B, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Capacitance @ Vr, F. | - | 200pF @ 4V, 1MHz | - | 190pF @ 4V, 1MHz |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | -55°C ~ 125°C | 150°C (Max) | -65°C ~ 125°C |
Eroflueden 1N5821 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N5821 - Microchip Technology.
1N5821Taiwan Semiconductor CorporationDIODE SCHOTTKY 30V 3A DO201AD1N5821RLSTMicroelectronicsDIODE SCHOTTKY 30V 3A DO201AD1N5821NTE Electronics, IncDIODE SCHOTTKY 30V 3A DO201AD1N5821Diotec SemiconductorSCHOTTKY DO-201 30V 3A
1N5820RLonsemiDIODE SCHOTTKY 20V 3A AXIAL1N5821RLonsemiDIODE SCHOTTKY 30V 3A AXIAL1N5821RLGonsemiDIODE SCHOTTKY 30V 3A AXIAL1N5822STMicroelectronicsDIODE SCHOTTKY 40V 3A DO201AD
1N5820-E3/73Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 20V 3A DO201AD
1N5820-TDiodes IncorporatedDIODE SCHOTTKY 20V 3A DO201AD
1N5821Fairchild SemiconductorDIODE SCHOTTKY 30V 3A DO2011N5821STMicroelectronicsDIODE SCHOTTKY 30V 3A DO201AD1N5821GonsemiDIODE SCHOTTKY 30V 3A AXIAL1N5821-E3/54Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 30V 3A DO201AD1N5820GonsemiDIODE SCHOTTKY 20V 3A AXIAL1N5820RLGonsemiDIODE SCHOTTKY 20V 3A AXIAL1N5820RLSTMicroelectronicsDIODE SCHOTTKY 20V 3A DO201AD
1N5821onsemiDIODE SCHOTTKY 30V 3A DO201AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.