1N5811 Tech Spezifikatioune
Microchip Technology - 1N5811 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N5811
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 875 mV @ 4 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard | |
| Supplier Device Package | B, Axial | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | Military, MIL-PRF-19500/477 | |
| Reverse Recovery Time (trr) | 30 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | B, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 150 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 60pF @ 10V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N5811.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | 1N5811 | 1N5806 | 1N5806E3 | 1N5813R |
| Hiersteller | Microchip Technology | Solid State Inc. | Microchip Technology | Microchip Technology |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 150 V | 150 V | 75 V |
| Capacitance @ Vr, F. | 60pF @ 10V, 1MHz | - | 25pF @ 10V, 1MHz | 300pF @ 10V, 1MHz |
| Voltage - Viru (Vf) (Max) @ Wann | 875 mV @ 4 A | 875 mV @ 1 A | 875 mV @ 1 A | 950 mV @ 20 A |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
| Package / Case | B, Axial | DO-204AP, Axial | Axial | DO-203AA, DO-4, Stud |
| Mounting Type | Through Hole | Through Hole | Through Hole | Stud Mount |
| Supplier Device Package | B, Axial | DO-204AP | A, Axial | DO-203AA (DO-4) |
| Serie | Military, MIL-PRF-19500/477 | - | - | - |
| Package protegéieren | Bulk | Box | Bulk | Bulk |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 150 V | 1 µA @ 150 V | 1 µA @ 150 V | 10 µA @ 75 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 2.5A | 1A | 20A |
| Technologie | Standard | Standard | Standard | Standard |
| Reverse Recovery Time (trr) | 30 ns | 25 ns | 25 ns | 35 ns |
Eroflueden 1N5811 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N5811 - Microchip Technology.
1N5806Solid State Inc.DIODE GEN PURP 150V 2.5A DO204AP1N5806E3Microchip TechnologyDIODE GEN PURP 150V 1A A AXIAL1N5813RMicrochip TechnologyDIODE GEN PURP 75V 20A DO203AA1N5719-54MA/COM1N5814Microchip TechnologyDIODE GEN PURP 100V 20A DO203AA
1N5813Solid State Inc.DIODE GEN PURP 75V 20A DO41N5811USMicrochip TechnologyDIODE GEN PURP 150V 3A B SQ-MELF1N5812Microchip TechnologyDIODE GEN PURP 50V 20A DO203AA1N5806Microchip TechnologyDIODE GEN PURP 150V 1A A AXIAL
1N5806USMicrochip TechnologyDIODE GEN PURP 150V 1A D-5A1N5812RMicrochip TechnologyDIODE GEN PURP 50V 20A DO203AA1N5812Solid State Inc.DIODE GEN PURP 50V 20A DO41N5814Solid State Inc.DIODE GEN PURP 100V 20A DO4
1N5767Broadcom LimitedRF DIODE PIN 100V 250MW1N5813Microchip TechnologyRECTIFIER DIODE
1N5807USJTX/TRMicrosemi1N5767Microchip TechnologySI PIN HEMETIC GLASS1N5811Solid State Inc.DIODE GEN PURP 150V 6A AXIAL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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