1N3618 Tech Spezifikatioune
Microchip Technology - 1N3618 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N3618
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 30 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-4 (DO-203AA) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AA, DO-4, Stud | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 16A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N3618.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N3618 | 1N3617 | 1N3620 | 1N3620 |
| Hiersteller | Microchip Technology | Microchip Technology | Solid State Inc. | Microchip Technology |
| Supplier Device Package | DO-4 (DO-203AA) | DO-4 (DO-203AA) | DO-4 | DO-203AA (DO-4) |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 30 A | 1 V @ 30 A | 1.2 V @ 50 A | 1.1 V @ 30 A |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Capacitance @ Vr, F. | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 150 V | 400 V | 400 V |
| Package protegéieren | Bulk | Bulk | Box | Bulk |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Serie | - | - | - | - |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 16A | 16A | 16A | 25A |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 150 V | 1.5 µA @ 400 V | 10 µA @ 400 V |
Eroflueden 1N3618 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N3618 - Microchip Technology.
1N3617Microchip TechnologyDIODE GEN PURP 150V 16A DO41N3620Solid State Inc.DIODE GEN PURP 400V 16A DO41N3620Microchip TechnologyDIODE GEN PURP 400V 25A DO203AA1N3621Microchip TechnologyDIODE GEN PURP 500V 16A DO41N3615Solid State Inc.DIODE GEN PURP 50V 16A DO41N3617Solid State Inc.DIODE GEN PURP 150V 16A DO41N3620RSolid State Inc.DIODE GEN PURP 400V 16A DO41N3618RSolid State Inc.DIODE GEN PURP 200V 16A DO41N3615Microchip TechnologyDIODE GEN PURP 50V 16A DO41N3619Microchip TechnologyDIODE GEN PURP 300V 25A DO41N3616Microchip TechnologyDIODE GEN PURP 100V 16A DO41N3618Solid State Inc.DIODE GEN PURP 200V 16A DO41N3621Solid State Inc.DIODE GEN PURP 500V 16A DO41N3619Solid State Inc.DIODE GEN PURP 300V 16A DO41N3616RMicrochip TechnologyDIODE GEN PURP 100V 16A DO41N3616Solid State Inc.DIODE GEN PURP 100V 16A DO41N3616RSolid State Inc.DIODE GEN PURP 100V 16A DO41N3619RSolid State Inc.DIODE GEN PURP 300V 16A DO4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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