1N3493 Tech Spezifikatioune
Microchip Technology - 1N3493 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N3493
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 35 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-21 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-208AA | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Press Fit | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N3493.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 1N3493 | 1N3494 | 1N3494 | 1N3494R |
| Hiersteller | Microchip Technology | Microchip Technology | Solid State Inc. | Solid State Inc. |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 35 A | 1.1 V @ 35 A | 1.7 V @ 57 A | 1.7 V @ 57 A |
| Technologie | Standard | Standard | Standard | Standard, Reverse Polarity |
| Serie | - | - | - | - |
| Capacitance @ Vr, F. | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35A | 35A | 25A | 25A |
| Supplier Device Package | DO-21 | DO-21 | Press Fit | Press Fit |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Package / Case | DO-208AA | DO-208AA | PRESS FIT | PRESS FIT |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 300 V | 1 mA @ 300 V | 1 mA @ 300 V |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 300 V | 300 V | 300 V |
| Mounting Type | Press Fit | Press Fit | Chassis Mount | Chassis Mount |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
Eroflueden 1N3493 PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N3493 - Microchip Technology.
1N3494Microchip TechnologyDIODE GEN PURP 300V 35A DO211N3494Solid State Inc.DIODE GP 300V 25A PRESS FIT1N3350RBMicrochip TechnologyDIODE ZENER 200V 50W DO51N34A1N3494RSolid State Inc.DIODE GP REV 300V 25A PRESS FIT1N3494RMicrochip TechnologyDIODE GEN PURP REV 300V 35A DO211N3492Microchip TechnologyDIODE GEN PURP 100V 35A DO211N3492RSolid State Inc.DIODE GP REV 100V 25A PRESS FIT1N3493RSolid State Inc.DIODE GP REV 200V 25A PRESS FIT1N3493Solid State Inc.DIODE GP 200V 25A PRESS FIT1N3495Microchip TechnologyDIODE GEN PURP 400V 35A DO211N3493RMicrochip TechnologyDIODE GEN PURP REV 200V 35A DO211N3495RMicrochip TechnologyDIODE GEN PURP REV 400V 35A DO211N3492RMicrochip TechnologyDIODE GEN PURP REV 100V 35A DO211N3491Solid State Inc.DIODE GEN PURP 50V 25A PRESS FIT
1N3350RBSolid State Inc.DO5 50 WATT ZENER DIODES1N3492Solid State Inc.DIODE GP 100V 25A PRESS FIT1N3491Microchip TechnologyDIODE GEN PURP 50V 35A DO21| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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