1N250C Tech Spezifikatioune
Microchip Technology - 1N250C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N250C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-5 (DO-203AB) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 5 µs |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 20A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N250C.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 1N250C | 1N250A | 1N250A | 1N250RA |
| Hiersteller | Microchip Technology | Microchip Technology | Solid State Inc. | Solid State Inc. |
| Supplier Device Package | DO-5 (DO-203AB) | DO-5 (DO-203AB) | DO-5 | DO-5 |
| Serie | - | - | - | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Package protegéieren | Bulk | Bulk | Box | Box |
| Technologie | Standard | Standard | Standard | Standard, Reverse Polarity |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 20A | 40A | 40A | 40A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V |
| Capacitance @ Vr, F. | - | - | - | - |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Reverse Recovery Time (trr) | 5 µs | - | - | - |
Eroflueden 1N250C PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N250C - Microchip Technology.
1N250AMicrochip TechnologyDIODE GEN PURP 200V 40A DO51N250ASolid State Inc.DIODE GEN PURP 200V 40A DO5
1N2500RMicrosemiIGBT Module1N250RASolid State Inc.DIODE GEN PURP REV 200V 40A DO51N250BMicrochip TechnologyDIODE GEN PURP 200V 40A DO51N250BSolid State Inc.DIODE GEN PURP 200V 40A DO51N2515RMicrosemiIGBT Module1N2517RMicrosemiIGBT Module1N250RSolid State Inc.DIODE GEN PURP REV 200V 40A DO51N2500MicrosemiIGBT Module1N250CSolid State Inc.DIODE GEN PURP 200V 40A DO51N250Solid State Inc.DIODE GEN PURP 200V 40A DO51N250RBSolid State Inc.DIODE GEN PURP REV 200V 40A DO51N249RBSolid State Inc.DIODE GEN PURP REV 100V 40A DO51N2515MicrosemiIGBT Module1N250Microchip TechnologyDIODE GEN PURP 200V 40A DO51N255RMicrosemiIGBT Module1N2517MicrosemiIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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