1N1206BR Tech Spezifikatioune
Microchip Technology - 1N1206BR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - 1N1206BR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-4 (DO-203AA) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-203AA, DO-4, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N1206 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology 1N1206BR.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N1206BR | 1N1206R | 1N1206R | 1N1206 |
| Hiersteller | Microchip Technology | Solid State Inc. | Microchip Technology | Microchip Technology |
| Capacitance @ Vr, F. | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.2 V @ 30 A | 1.2 V @ 30 A |
| Basis Produktnummer | 1N1206 | - | 1N1206 | 1N1206 |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 600 V | 600 V |
| Technologie | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 12A | 12A | 12A |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 600 V | 10 µA @ 600 V | 10 µA @ 600 V |
| Package protegéieren | Bulk | Box | Bulk | Bulk |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Supplier Device Package | DO-4 (DO-203AA) | DO-4 | DO-4 (DO-203AA) | DO-4 (DO-203AA) |
Eroflueden 1N1206BR PDF DataDhusts an Microchip Technology Dokumentatioun fir 1N1206BR - Microchip Technology.
1N1227BMicrosemiIGBT Module1N1206RSolid State Inc.DIODE GEN PURP REV 600V 12A DO41N1227AMicrosemiIGBT Module1N1206RMicrochip TechnologySTANDARD RECTIFIER1N1206Microchip TechnologySTANDARD RECTIFIER1N1227IRIGBT Module1N1206ASolid State Inc.DIODE GEN PURP 600V 12A DO4
1N1206AGeneSiC SemiconductorDIODE GEN PURP 600V 12A DO41N1206Solid State Inc.DIODE GEN PURP 600V 12A DO41N1206ARMicrochip TechnologySTANDARD RECTIFIER1N1206BMicrochip TechnologySTANDARD RECTIFIER
1N120BFairchild (onsemi)1N1206AMicrochip TechnologyDIODE GEN PURP 600V 12A DO203AA1N1206RBSolid State Inc.DIODE GEN PURP REV 600V 12A DO41N1206BSolid State Inc.DIODE GEN PURP 600V 12A DO41N1206ARGeneSiC SemiconductorDIODE GEN PURP REV 600V 12A DO41N1206CMicrochip TechnologySTANDARD RECTIFIER1N1206RASolid State Inc.DIODE GEN PURP REV 600V 12A DO4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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