MURB820 Tech Spezifikatioune
Yangjie Technology - MURB820 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Yangjie Technology - MURB820
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Yangjie Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 8 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | D2PAK | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 40 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | |
| Capacitance @ Vr, F. | 120pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Yangjie Technology MURB820.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | MURB820 | MURB820TRL | MURB820 | MURD310T4 |
| Hiersteller | Yangjie Technology | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | onsemi |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8A | 8A | 8A | 3A |
| Reverse Recovery Time (trr) | 40 ns | 35 ns | 35 ns | 35 ns |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 100 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | D2PAK | TO-263AB (D²PAK) | TO-263AB (D²PAK) | DPAK |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 8 A | 975 mV @ 8 A | 975 mV @ 8 A | 950 mV @ 3 A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Serie | - | FRED Pt® | FRED Pt® | SWITCHMODE™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 5 µA @ 200 V | 5 µA @ 200 V | 5 µA @ 100 V |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
| Capacitance @ Vr, F. | 120pF @ 0V, 1MHz | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
MURB820TRLVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 8A TO263ABMURB2020CTTRLPIR
MURD310T4GAMI Semiconductor/onsemiMURB820TRLPBFIRMURB2020CT-1PBFIR
MURB2020CTTRRPElectro-Films (EFI) / VishayMURC5JPANJITMURB2030CT-GSSGMURB2020CTPBFElectro-Films (EFI) / VishayMURB820PBFElectro-Films (EFI) / VishayMURB820Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 8A TO263AB
MURB2020CT-1Vishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 200V 10A TO262MURD305T4GAMI Semiconductor/onsemiMURD305T4MOTOROLAMURB3060CTYANGJIEMURD310T4onsemiDIODE GEN PURP 100V 3A DPAKMURB2020CTTRElectro-Films (EFI) / VishayMURB2020CTTRRVishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 200V 10A D2PAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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