MUR1615CT Tech Spezifikatioune
Harris Corporation - MUR1615CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - MUR1615CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Voltage - Viru (Vf) (Max) @ Wann | 975 mV @ 8 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220-3 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | SWITCHMODE™ | |
| Reverse Recovery Time (trr) | 35 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 150 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 8A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation MUR1615CT.
| Produktiounsattriff | |
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|
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|---|---|---|---|---|
| Part Number | MUR1615CT | MUR1620CT | MUR1610CT | MUR1620CT |
| Hiersteller | Harris Corporation | Vishay General Semiconductor - Diodes Division | Harris Corporation | Taiwan Semiconductor Corporation |
| Serie | SWITCHMODE™ | FRED Pt® | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 8A | 8A | 8A | 16A |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220AB |
| Reverse Recovery Time (trr) | 35 ns | 35 ns | 30 ns | 25 ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Voltage - Viru (Vf) (Max) @ Wann | 975 mV @ 8 A | 950 mV @ 8 A | 975 mV @ 8 A | 975 mV @ 8 A |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 175°C |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 200 V | 100 V | 200 V |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 150 V | 5 µA @ 200 V | 500 µA @ 100 V | 5 µA @ 200 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
MUR160S R5GTaiwan Semiconductor CorporationDIODE GEN PURP 600V 1A DO214AAMUR1620CTVishay General Semiconductor - Diodes DivisionDIODE ARRAY GP 200V 8A TO220ABMUR1610CTHarris CorporationDIODE ARRAY GP 100V 8A TO220ABMUR1620CTTaiwan Semiconductor CorporationDIODE ARRAY GP 200V 16A TO220AB
MUR160S M4GTSC (Taiwan Semiconductor)DIODE GEN PURP 600V 1A DO214AAMUR1615CTSolid State Inc.DIODE GEN PURP 150V 16A TO220
MUR1615CTGonsemiDIODE ARRAY GP 150V 8A TO220ABMUR1620CTSolid State Inc.DIODE GEN PURP 200V 16A TO220
MUR1620CTATaiwan SemiconductorMUR1620CTGood-Ark SemiconductorRECTIFIER, SUPER FAST, DUAL, 16A
MUR1610AMI Semiconductor/onsemiMUR1620CTGonsemiDIODE ARRAY GP 200V 8A TO220ABMUR1620NOIGBT ModuleMUR1620CTonsemiDIODE ARRAY GP 200V 8A TO220ABMUR160SBMUR1615CTonsemiDIODE ARRAY GP 150V 8A TO220ABMUR1610CTonsemiDIODE ARRAY GP 100V 8A TO220ABMUR160STaiwan Semiconductor CorporationDIODE GEN PURP 600V 1A DO214AA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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