EFC4C002NLTDG Tech Spezifikatioune
Texas Instruments - EFC4C002NLTDG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - EFC4C002NLTDG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 2.2V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-WLCSP (6x2.5) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power - Max | 2.6W | |
| Package / Case | 8-XFBGA, WLCSP | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | - | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
| Konfiguratioun | 2 N-Channel (Dual) Common Drain | |
| Basis Produktnummer | EFC4C002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments EFC4C002NLTDG.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | EFC4C002NLTDG | EFC4C002NLTDG | EFC4630R-TR | EFC4C002NLTDG |
| Hiersteller | Texas Instruments | Fairchild Semiconductor | onsemi | onsemi |
| Power - Max | 2.6W | 2.6W | 1.6W | 2.6W |
| Package / Case | 8-XFBGA, WLCSP | 8-XFBGA, WLCSP | 4-XFBGA | 8-XFBGA, WLCSP |
| Konfiguratioun | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain |
| Supplier Device Package | 8-WLCSP (6x2.5) | 8-WLCSP (6x2.5) | EFCP1313-4CC-037 | 8-WLCSP (6x2.5) |
| Vgs (th) (Max) @ Id | 2.2V @ 1mA | 2.2V @ 1mA | 1.3V @ 1mA | 2.2V @ 1mA |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate, 2.5V Drive | Logic Level Gate |
| Entworf fir Source Voltage (Vdss) | - | - | 24V | - |
| Rds On (Max) @ Id, Vgs | - | - | 45mOhm @ 3A, 4.5V | - |
| Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | - | 6A (Ta) | - |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V | 45nC @ 4.5V | 7nC @ 4.5V | 45nC @ 4.5V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Basis Produktnummer | EFC4C002 | EFC4C002 | EFC4630 | EFC4C002 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 15V | 6200pF @ 15V | - | 6200pF @ 15V |
EFC4C002NLTDGFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOREFC6301-TRAMI Semiconductor/onsemiEFC4630R-TRonsemiINTEGRATED CIRCUITEFC4C002NLTDGonsemiMOSFET 2N-CH 8WLCSPEFC6605R-V-TRonsemiMOSFET N-CH DUAL 10A 24V 6XFLGAEFC6601R-TRonsemiMOSFET 2N-CH EFCPEFC6604R-TFAMI Semiconductor/onsemiEFC6604R-TRonsemiMOSFET 2N-CH 6EFCPEFC4623R-TRAMI Semiconductor/onsemiEFC6602R-TRonsemiMOSFET 2N-CH EFCPEFC4622R-W-NAMI Semiconductor/onsemiEFC6605R-TRonsemiMOSFET 2N-CH 6EFCPEFC4624R-TRAMI Semiconductor/onsemiEFC4626RONsemiEFC4C012NLTDGONsemiEFC4626R-TRonsemiMOSFET 2N-CH 24V 5A CSP4EFC6602R-A-TRonsemiMOSFET 2N-CH EFCPEFC4627R-A-TRonsemiMOSFET 2N-CH 12V 6A CSP4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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