CSD19536KCS Tech Spezifikatioune
Texas Instruments - CSD19536KCS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD19536KCS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Texas Instruments | |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | NexFET™ | |
Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150A (Ta) | |
Basis Produktnummer | CSD19536 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD19536KCS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | CSD19536KCS | CSD19534KCS | CSD19535KTT | CSD19533Q5AT |
Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | TO-220-3 | TO-220-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | 8-PowerTDFN |
Power Dissipation (Max) | 375W (Tc) | 118W (Tc) | 300W (Tc) | 3.2W (Ta), 96W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 50 V | 1670 pF @ 50 V | 7930 pF @ 50 V | 2670 pF @ 50 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V | 16.5mOhm @ 30A, 10V | 3.4mOhm @ 100A, 10V | 9.4mOhm @ 13A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150A (Ta) | 100A (Ta) | 200A (Ta) | 100A (Ta) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | CSD19536 | CSD19534 | CSD19535 | CSD19533 |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V | 22.2 nC @ 10 V | 98 nC @ 10 V | 35 nC @ 10 V |
Serie | NexFET™ | - | NexFET™ | NexFET™ |
Supplier Device Package | TO-220-3 | TO-220-3 | DDPAK/TO-263-3 | 8-VSONP (5x6) |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | 3.4V @ 250µA | 3.4V @ 250µA | 3.4V @ 250µA |
Eroflueden CSD19536KCS PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD19536KCS - Texas Instruments.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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